Selective Growth of GaAs on GaAs (111)B Substrates by Migration-Enhanced Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-11-15
著者
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Suzuki K
School Of Science And Engineering Waseda University:kagami Memorial Laboratory For Materials Science
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Suzuki Keita
School Of Agriculture Kyushu Tokai University
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Suzuki Kenji
Institute For Materials Research Laboratory Tohoku University
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Suzuki K
Central Research Laboratory Alps Electric Co. Ltd.
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Suzuki Kenshu
Division Of Public Health Department Of Social Medicine Nihon University School Of Medicine
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Suzuki K
Ntt Transmission Systems Laboratories Lightwave Communications Laboratory
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Suzuki K
Assoc. Super‐advanced Electronics Technol. Kanagawa Jpn
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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Horikoshi Yoshiji
Ntt Basic Research Laboratories:(present Address) School Of Science And Engineering Waseda Universit
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Horikoshi Yoshiji
Ntt Electrial Communication Laboratories
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Suzuki K
Department Of Information And Communication Technology Tokai University
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ITO Masahiro
Kagami Memorial Laboratory for Materials Science and Technology, Waseda University
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HORIKOSHI Yoshiji
Kagami Memorial Laboratory for Materials Science and Technology, Waseda University
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Horikoshi Y
Department Of Electrical Electronics And Computer Engineering School Of Science And Engineering Wase
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Suzuki K
東京大学大学院農学生命科学研究科獣医病理学研究室
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Ito Masahiro
School Of Science And Engineering Waseda University:kagami Memorial Laboratory For Materials Science
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Horikoshi Yoshiji
Kagami Memorial Laboratory For Materials Science And Technology Waseda University
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