Reactive Ion Etching of Sputtered PbZr_<1-x>Ti_xO_3 Thin Films
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概要
- 論文の詳細を見る
Reactive ion etching (RIE) by CCl_4 plasma of sputtered PbZr_<1-x>Ti_xO_3 (PZT) thin film has been investigated. The etching rate of the as-deposited pyrochlore phase PZT is comparable to that of perovskite which was crystallized by 600℃ annealing. Etching rate increased with increasing RF power and reached a plateau at 1.0 W/cm^2. Highly anisotropic etching of PZT with little resist damage could be realized by reducing RF power.
- 社団法人応用物理学会の論文
- 1992-09-01
著者
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Suzuki Kenji
Institute For Materials Research Laboratory Tohoku University
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SAITO Katsuaki
Hitachi Research Laboratory, Hitachi Ltd.
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OHUE Michio
Hitachi Research Laboratory, Hitachi Ltd.
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Ohue Michio
Hitachi Research Laboratory Hitachi Ltd.
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Fukuda Takuya
Hitachi Research Laboratory Hitachi Ltd.
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Suzuki K
横浜国大 大学院工学研究院
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鈴木 和夫
横浜大
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Choi J
Hitachi Research Laboratory Hitachi Ltd.
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CHOI Jai-Ho
Hitachi Research Laboratory, Hitachi Ltd.
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Choi Jai-ho
Hitachi Research Laboratory Hitachi Ltd.
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