TiO_2 Thim Films Formed by Electron Cyclotron Resonance Plasma Oxidation at High Temperature and Their Application to Capacitor Dielectrics
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概要
- 論文の詳細を見る
Low-leakage-current rutile-TiO_2 thin films were fabricated by electron cyclotron resonance (ECR) plasma oxidation of Ti thin films. Rutile-TiO_2 thin films could be obtained at substrate temperatures above 280℃. A relative dielectric constant of about 120 was obtained at substrate temperatures above 390℃. Leakage current characteristics of the TiO_2 thin films were improved by using high-temperature plasma oxidation and high-work-function electrodes. A leakage current of less than 1×10^<-8> A/cm^2 at an applied voltage of 1.25 V was obtained for a Au/TiO_2/Pt capacitor with SiO_2 equivalent thickness of 4.9 nm.
- 社団法人応用物理学会の論文
- 1994-09-01
著者
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阿部 良夫
日立
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Fukuda Takuya
Hitachi Research Laboratory Hitachi Ltd.
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ABE Yoshio
Hitachi Research Laboratory, Hitachi, Ltd.
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Abe Yoshio
Hitachi Research Laboratory Hitachi Ltd.
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Abe Yoshio
Hitachi Research Laboratory Hitachi Ltd.:(present Address) Kitami Institute Of Technology
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