Effects of Excited Plasma Species on Silicon Oxide Films Formed by Microwave Plasma CVD
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概要
- 論文の詳細を見る
By using a microwave plasma deposition system, effects of highly excited plasma species on the film formation of silicon oxide have been studied and the roles of excited ion and radical species have been investigated by emission spectra of the excited plasma species. A strong correlation was confirmed between film quality and the amount of highly excited ion species transported to the substrate. Furthermore, high quality films could be formed by increasing the amount of the excited species.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-06-20
著者
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Ohue Michio
Hitachi Research Laboratory Hitachi Ltd.
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Fukuda Takuya
Hitachi Research Laboratory Hitachi Ltd.
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Momma Naohiro
Hitachi Research Laboratory Hitachi Ltd.
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SUZUKI Kazuo
Hitachi Works, Hitachi, Ltd.
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Sonobe Tadashi
Hitachi Ltd. Hitachi Works.
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Fukuda Takuya
Hitachi Research Laboratory, Hitachi Ltd., 4026 Kuji-cho, Hitachi-shi, Ibaraki 319-12
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Momma Naohiro
Hitachi Research Laboratory, Hitachi Ltd., 4026 Kuji-cho, Hitachi-shi, Ibaraki 319-12
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