TiO_2 Thin Films Formed by Electron Cyclotron Resonance Plasma Oxidation of Ti Thin Films
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概要
- 論文の詳細を見る
TiO_2 thin films with a relative-dielectric constant of 20 were fabricated by electron cyclotron resonance (ECR) plasma oxidation of Ti thin films without substrate heating. The relative-dielectric constant was found to be constant for film thicknesses from 3.5 to 26 nm, and the maximum capacitance of 37 fF/μm^2 was obtained for the thickness of 3.5 nm.
- 社団法人応用物理学会の論文
- 1993-08-15
著者
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阿部 良夫
日立
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Fukuda Takuya
Hitachi Research Laboratory Hitachi Ltd.
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Abe Yoshio
Hitachi Research Laboratory Hitachi Ltd.
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Abe Yoshio
Hitachi Research Laboratory Hitachi Ltd.:(present Address) Kitami Institute Of Technology
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