Si Etching with a Hot SF_6 Beam and the Etching Mechanism
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概要
- 論文の詳細を見る
Silicon surface etching using a hot SF_6 (SF^*_6) molecular beam is being investigated in the interest of studying the influence of vibrational energy on surface reactions and developing a damage-free etching technique. The SF^*_6 beam is produced by the free jet expansion of SF_6 gas heated in a quartz furnace. It is seen that SF^*_6 vibrational energy enhances the Si etch rate. It is also shown that the Arrhenius model modified to take the vibrational energy effect into account can explain the experimental results. The model parameters are then determined to be 6500 cm^<-1> for activation energy (E_a), 0.17 for the efficiency (α) of the vibrational energy used to clear the activation energy barrier, and 5.0 for the frequency factor (A).
- 社団法人応用物理学会の論文
- 1987-01-20
著者
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Suzuki K
Ntt Transmission Systems Laboratories Lightwave Communications Laboratory
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Suzuki K
Assoc. Super‐advanced Electronics Technol. Kanagawa Jpn
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Ninomiya Kunimoto
New Materials Research Center Sanyo Electric Co. Ltd.
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Ninomiya Kunimoto
Functional Materials Research Center Sanyo Electric Co. Ltd.
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Suzuki K
Department Of Information And Communication Technology Tokai University
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SUZUKI Keizo
Central Research Laboratory, Hitachi, Ltd.
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Ninomiya K
Central Research Laboratory
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Ninomiya Ken
Central Research Laboratory Hitachi Ltd.
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Nishimatsu Shigeru
Central Research Laboratory, Hitachi, Ltd.
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Nishimatsu S
Central Research Laboratory Hitachi Ltd.
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Nishimatsu Shigeru
Central Research Laboratory Hitachi Lid.
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Okada O
Central Research Laboratory Hitachi Ltd.
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Okada Osami
Central Research Laboratory Hitachi Ltd.
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Suzuki Keizo
Central Research Laboratory Hitachi Limited
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NINOMIYA Ken
Central Research Laboratory
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