High-Rate Deposition of a-Si:H Film with a Separated Plasma Triode Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-01-20
著者
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Tanaka M
Production Engineering Research Laboratory Hitachi Ltd.
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Nakano Shoichi
Department Of Physiology Tokai University School Of Medicine
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Nakamura N
Tokyo Inst. Technol. Yokohama Jpn
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Tsuda Shinya
R&d Headquarters Sanyo Electric Co. Ltd.
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TSUDA Shinya
Research Center, Sanyo Electric Co., Ltd.
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Nakamura Noboru
Functional Materials Research Center Sanyo Electric Co. Ltd.
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Tanaka M
Toshiba Corp. Kawasaki Jpn
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Ninomiya Kunimoto
New Materials Research Center Sanyo Electric Co. Ltd.
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Ninomiya Kunimoto
Functional Materials Research Center Sanyo Electric Co. Ltd.
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TANAKA MAKOTO
Research Center, Taisho Pharmaceutical Co., Ltd.
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OSUMI Masato
SANYO Electric Co., Ltd.
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NAKANO Shoichi
Research Center, SANYO Electric Co., Ltd.
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NAKAMURA Noboru
Research Center, SANYO Electric Co., Ltd.
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OHNISHI Michitoshi
Applied Research Center, SANYO Electric Co., Lid.
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Tanaka M
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Nakamura N
Department Of Information Processing Tokyo Institute Of Technology
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Ninomiya K
Central Research Laboratory
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Kuwano Yukinori
Research And Development Center Sanyo Electric Co. Ltd.
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NINOMIYA Kunimoto
Research Center, SANYO Electric Co., Ltd.
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Ohnishi Michitoshi
Sony Corporation Research Center
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TANAKA Makoto
Research Center, Taisho Pharmaceutical Co., Ltd
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