Preparation of c-Axis Oriented AlN Thin Films by Low-Temperature Reactive Sputtering
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概要
- 論文の詳細を見る
C-axis oriented aluminum nitride (AlN) thin films on (110) silicon were prepared by reactive RF magnetron sputtering in argon and nitrogen atmosphere without substrate heating. We investigated the dependence of some properties for the AlN thin film on sputtering conditions, especially N_2 concentration. It was found that c-axis orientation tended to improve gradually with decreasing N_2 concentration. The full width of half the maximum intensity (FWHM) of the rocking curve for a (002) plane of hexagonal AlN was l ∼ 2 degrees at a 10% N_2 concentration. This was a suitable value for surface acoustic wave (SAW) device. IDT/AlN/(110)Si structure SAW resonators were fabricated. It was confirmed that the insertion loss was 14 dB and phase velocity was 4800 m/s, respectively.
- 社団法人応用物理学会の論文
- 1992-10-15
著者
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NAKANO Shoichi
Functional Materials Research Center, Sanyo Electric Co., Ltd.
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SHIBATA Kenichi
Functional Materials Research Center, Sanyo Electric Co.
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Tanaka T
Department Of Electric And Electronic Engineering Toyohashi University Of Technology
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Nakano Shoichi
Department Of Physiology Tokai University School Of Medicine
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Nakano Shoichi
Sanyo Electric Co. Ltd.
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Nakano Shoichi
Functional Materials Research Center Sanyo Electric Co. Ltd.
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Shibata K
New Materials Research Center Sanyo Electric Co. Ltd.
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Kiyama Seiichi
New Materials Research Center Sanyo Electric Co. Ltd.
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Sayama Katsunobu
New Materials Research Center Sanyo Electric Co. Ltd.
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TANAKA Toshiharu
Functional Materials Research Center, SANYO Electric Co., Ltd.
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Okano H
Applied Materials Japan Inc. Chiba Jpn
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OKANO Hiroshi
Functional Materials Research Center, SANYO Electric Co., Ltd.
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TAKAHASHI Yusuke
Functional Materials Research Center, SANYO Electric Co., Ltd.
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Kouzuma Shinichi
Functional Materials Research Center Sanyo Electric Co. Ltd.
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Takahashi Yusuke
Functional Materials Research Center Sanyo Electric Co. Ltd.
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