Freeze-Drying Process to Avoid Resist Pattern Collapse
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-12-15
著者
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Oizumi H
Hitachi Ltd. Tokyo Jpn
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Oizumi H
Aset Euvl Lab. Kanagawa Jpn
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Oizumi Hiroaki
Sortec Corporation
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Tanaka T
Department Of Electric And Electronic Engineering Toyohashi University Of Technology
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OGAWA Taro
Central Research Laboratory, Hitachi Ltd.
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TANAKA Toshihiko
Central Research Laboratory, Hitachi, Ltd.
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MORIGAMI Mitsuaki
SORTEC Corporation
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Ogawa Taro
Central Research Laboratory Hitachi Ltd.
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Morigami M
Sortec Corp. Ibaraki Jpn
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Tanaka Toshihiko
Central Research Laboratory, Hitachi Ltd.
関連論文
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- Theoretical Estimation of Absorption Coefficients of Various Polymers at 13 nm
- Effect of Intentionally Formed 'V-Defects' on the Emission Efficiency of GaInN Single Quantum Well
- GaN-Based Laser Diodes Processed by Annealing with Minority-Carrier Injection
- Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy
- Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Selective Generation of Defects in Polydiacetylene Langmuir-Blodgett Films on Si Substrates as Studied by X-Ray Photoelectron Spectroscopy
- Electroplated Reflection Masks for Soft X-Ray Projection Lithography
- Resist Performance in 5 nm Soft X-Ray Projection Lithography
- Reduction Imaging at 4.5 nm with Schwarzschild Optics
- Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
- Sub-0.1 μm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography
- Structure of Self-Assembled Monolayers from Amphiphilic Diacetylene Derivatives on Indium-Tin Oxide
- Alignment of Surface-Stabilized Ferroelectric Liquid Crystal by the Self-Assembled Monolayers of Amphiphilic Diacetylene Derivatives
- New RAM-bus Memory System with Interchip Optical Interconnection
- Micron-Size Optical Waveguide for Optoelectronic Integrated Circuit
- Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
- Direct Patterning of the Currernt Confinement Structure for p-Type Column-III Nitrides by Low-Energy Electron Beam Irradiation Treatment
- Ring-Field Extreme Ultraviolet Exposure System Using Aspherical Mirrors
- Influence of Oxygen upon Radiation Durability of SiN X-Ray Mask Membranes : Lithography Technology
- Influence of Oxygen upon Radiation Durability of SiN X-ray Mask Membranes
- F-K XANES Studies of Alkali Fluorides
- F-K XANES Studies of Alkaline-Earth Fluorides
- Wet-silylation Process for X-ray and EUV Lithographies
- X-Ray Mask Technology Utilizing an Optical Stepper
- Negative Tone Dry Development of Si-Containing Resists by Laser Ablation
- X-Ray Lithography with a Wet-Silylated and Dry-Developed Resist
- Prevention of Resist Pattern Collapse by Flood Exposure during Rinse Process
- New Dry Surface-Imaging Process for X-Ray Lithography
- Simulation of AZ-PN100 Resist Pattern Fluctuation in X-Ray Lithography, Including Synchrotron Beam Polarization
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- X-ray Mask Technology utilizing an Optical Stepper : X-Ray Lithography
- Large Grain Growth in Cu(In, Ga)Se_2 Thin Films with Band Gap of around 1.4 eV by Thermal Crystallization in Saturated Se Vapors
- Preparation of Ordered Vacancy Chalcopyrite Thin Films by RF Sputtering from CuInSe_2 Target with Na_2Se
- Highly Accurate CO_2 Gas Sensor Using a Modulation-Type Pyroelectric Infrared Detector
- Modulation Type Pyroelectric IR Detector
- Relationship between Crosstalk and Readout Magnetic Field Direction on Trilayer Magnetically-Induced Super Resolution Media
- Electrical Conductivity of Low-Temperature-Deposited Al_Ga_N Interlayer
- Piezoelectric Stark-like Ladder in GaN/GaInN/GaN Heterostructures
- Structural Properties of Al_In_xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy
- GaN Based Laser Diode with Focused Ion Beam Etched Mirrors
- Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
- Photon-Stimulated Ion Desorption Measurement of Organosilicon Resist Reactions in Extreme Ultraviolet Lithography
- Roles of Surface Functional Groups on TiN and SiN Substrates in Resist Pattern Deformations
- Investigation of Resist Pattern Deformation in Chemical Amplification Resists on SiN_x Substrates
- Very High-Density Recording on Exchange-Coupled Trilayer Magnetically Induced Super Resolution Media without Special Initializing Magnet
- Imagings of Picosecond-Photoexcited Carriers and Enhanced Auger Recombination Rate by Transient Reflecting Grating Measurements
- Laser-Stimulated Scattering Microscope Study of an Jon-Implanted Silicon Surface
- 0.13 μm Pattern Delineation Using KrF Excimer Laser Light
- DEPURINATION OF ADENOSINE AND DEOXYADENOSINE MONOPHOSPHATES IN THE HEMIN-HYDROPEROXIDE SYSTEM
- Investigation of the Characteristics of a Piezoelectric Chopper for a Modulation-Type Pyroelectric Infrared Detector
- Mechanism of Resist Pattern Collapse during Development Process
- Far-Infrared Optical Properties of Quenched Germanium : IV. Uniaxial Stress Effects on the SA_2 Acceptor
- Far-Infrared Optical Properties of Quenched Germanium III. : Effects of Additional Impurities
- Negative Resist for i-Line Lithography Utilizing Acid Catalyzed Silanol-Condensation Reaction : Resist Material and Process
- Preparation of c-Axis Oriented AlN Thin Films by Low-Temperature Reactive Sputtering
- Orientation Control of AlN Film by Electron Cyclotron Resonance Ion Beam Sputtering
- Resolution Limitation of Proximity X-Ray Lithography Determined by Waveguide Effect
- Evaluation of the Waveguide Effect in Proximity X-Ray Lithography Using an Optical Trace Method
- A New-Structure IR Gas Sensor
- Modulation Type Pyroelectric Infrared Sensor Using LiTaO_3 Single Crystal : P: Pyroelectrics
- Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
- Negative Resist for i-Line Lithography Utilizing Acid Catalyzed Silanol-Condensation Reaction
- Thermogravimetric and High-Temperature X-Ray Studies on the Orthorhombic-to-Tetragonal Transition of YBa_2Cu_3O_y
- Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
- Down to 0.1 μm Pattern Replication in Synchrotron Radiation Lithography
- High T_c Superconductor YBa_2Cu_3O_y : Oxygen Content vs T_c Relation
- The Effects of Secondary Electrons form a Silion Substrate on SR X-Ray Lithography : Lithography Technology
- Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate
- The Effects of Secondary Electrons from a Silion Substrate on SR X-Ray Lithography