Orientation Control of AlN Film by Electron Cyclotron Resonance Ion Beam Sputtering
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概要
- 論文の詳細を見る
Orientation control of aluminum nitride (AlN) films deposited on a-SiN/(110)Si was investigated by controlling the assisted nitrogen ion beam. Films were deposited using an electron cyclotron resonance (ECR) dual ion beam sputtering system having an ECR ion gun for irradiation and Kaufman-type ion gun for sputtering. It was found that AlN films with perpendicular and parallel orientation to the substrate could be obtained. These films consisted of micrograins. However, it was confirmed from reflection high energy electron diffraction (RHEED) and selected area electron diffraction (SAED) patterns that the former was c-axis oriented film and the latter was nearly single crystal.
- 社団法人応用物理学会の論文
- 1992-09-30
著者
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NAKANO Shoichi
Functional Materials Research Center, Sanyo Electric Co., Ltd.
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SHIBATA Kenichi
New Materials Research Center, SANYO Electric Co., Ltd.
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SHIBATA Kenichi
Functional Materials Research Center, Sanyo Electric Co.
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Tanaka T
Department Of Electric And Electronic Engineering Toyohashi University Of Technology
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Nakano Shoichi
Department Of Physiology Tokai University School Of Medicine
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Nakano Shoichi
Sanyo Electric Co. Ltd.
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Nakano Shoichi
Functional Materials Research Center Sanyo Electric Co. Ltd.
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Shibata K
New Materials Research Center Sanyo Electric Co. Ltd.
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Kiyama Seiichi
New Materials Research Center Sanyo Electric Co. Ltd.
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Shibata Kenichi
New Material Research Center Sanyo Electric Co. Ltd.
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TANAKA Toshiharu
Functional Materials Research Center, SANYO Electric Co., Ltd.
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Okano H
Applied Materials Japan Inc. Chiba Jpn
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OKANO Hiroshi
Functional Materials Research Center, SANYO Electric Co., Ltd.
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