Okano H | Applied Materials Japan Inc. Chiba Jpn
スポンサーリンク
概要
関連著者
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Okano H
Applied Materials Japan Inc. Chiba Jpn
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Shibata K
New Materials Research Center Sanyo Electric Co. Ltd.
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Kiyama Seiichi
New Materials Research Center Sanyo Electric Co. Ltd.
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SHIBATA Kenichi
New Materials Research Center, SANYO Electric Co., Ltd.
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Shibata Kenichi
New Material Research Center Sanyo Electric Co. Ltd.
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TANAKA Naoki
New Materials Research Center, SANYO Electric Co., Ltd.
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Tanaka N
Applied Physics Department Graduate School Of Engineering Nagoya University
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Sekine M
Association Of Super-advanced Electronics Technologies (aset):(present Address)process & Manufac
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Tanaka N
Nagoya Univ. Nagoya Jpn
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HORIOKA Keiji
The Institute of Scientific and Industrial Research, Osaka University
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OKANO Hiroshi
New Materials Research Center, SANYO Electric Co., Ltd.
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Horioka Keiji
Ulsi Research Laboratories Research And Development Center Toshiba Corporation
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USUKI Tatsuro
New Materials Research Center, SANYO Electric Co., Ltd.
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Usuki T
Sanyo Electric Co. Ltd. Osaka Jpn
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Usuki T
New Materials Research Center Sanyo Electric Co. Ltd.
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Usuki Tatsuro
New Materials Research Center Sanyo Electric Co. Ltd.
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Okano Haruo
Ulsi Research Center Toshiba Corp.
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Kobayashi Y
Tokai Univ. Kanagawa Jpn
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Nakano Shoichi
Department Of Physiology Tokai University School Of Medicine
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Kobayashi Y
Ntt Basic Research Lab. Kanagawa
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Kobayashi Y
Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
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Nakano Shoichi
Sanyo Electric Co. Ltd.
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Horiike Yasuhiro
Faculty Of Engineering Hiroshima University
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Kangawa Yoshihiro
Department Of Applied Chemistry Tokyo University Of Agriculture And Technology
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Kobayashi Y
Department Of Nuclear Engineering Graduate School Of Engineering
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KOBAYASHI Yasumi
New Materials Research Center, SANYO Electric Co., Ltd.
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堀池 靖浩
広島大工
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NAKANO Shoichi
Functional Materials Research Center, Sanyo Electric Co., Ltd.
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SHIBATA Kenichi
Functional Materials Research Center, Sanyo Electric Co.
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Nakano Shoichi
Functional Materials Research Center Sanyo Electric Co. Ltd.
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Arikado T
Semiconductor Leading Edge Technologies Inc.
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Ohiwa T
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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OKANO Hiroshi
Functional Materials Research Center, SANYO Electric Co., Ltd.
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Arikado Tunetoshi
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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Tanaka T
Department Of Electric And Electronic Engineering Toyohashi University Of Technology
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Nakano Shoichi
New Materials Research Center Sanyo Electric Co. Ltd.
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Nakano S
Functional Materials Research Center Sanyo Electric Co. Ltd.
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Nakano S
東海大学医学部生理科学教室
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HORIIKE Yasuhiro
Toshiba Research and Development Center
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WADA Jun-ichi
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory
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Wada Jun-ichi
Ulsi Research Laboratories Research And Development Center Toshiba Corporation
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Okano Haruo
Toshiba Research and Development Center
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Sayama Katsunobu
New Materials Research Center Sanyo Electric Co. Ltd.
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TANAKA Toshiharu
Functional Materials Research Center, SANYO Electric Co., Ltd.
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Wada Jun-ichi
Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory
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Yoshida Y
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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HAYASAKA Nobuo
ULSI Research Center, Toshiba Corp.
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Shimomura K
Department Of Electrical And Electronic Engineering Sophia University
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SEKINE Makoto
ULSI Device Development Division, NEC Corporation
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OHIWA Tokuhisa
ULSI Research Center, Toshiba Corporation
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ARIKADO Tsunetoshi
ULSI Research Center, Toshiba Corporation
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HAYASAKA Nobuo
Microelectronics Engineering Lab., Toshiba Corp.
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Hayasaka N
Microelectronics Engineering Lab. Toshiba Corp.
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Hayasaka Nobuo
Ulsi Research Center Toshiba Corp.
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YOSHIDA Yukimasa
Semiconductor Manufacturing Engineering Center, Semiconductor Division, Toshiba Corporation
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SEKINE Makoto
Toshiba VLSI Research Center
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HORIIKE Yasuhiro
VLSI Research Center, Toshiba Corporation
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SEKINE Makoto
VLSI Research Center, Toshiba Corp.
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OKANO Haruo
VLSI Research Center, Toshiba Corp.
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Hasegawa Isahiro
Mos Process Engineering Department Toshiba Corp.
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Sekine Makoto
Ulsi Device Development Division Nec Corporation
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Kouzuma Shinichi
Functional Materials Research Center Sanyo Electric Co. Ltd.
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NAKANO Shoichi
New Materials Research Center, Sanyo Electric Co., Ltd.
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MORI Hirotaro
Research Center for Ultrahigh Voltage Electron Microscopy, Osaka University
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Takeuchi K
Riken (the Institute Of Physical And Chemical Research)
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Kaneko Hisashi
Ulsi Research Laboratories Research And Development Center Toshiba Corporation
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MATSUI Ken-ichi
Department of Physics, Faculty of Science, Osaka University
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Yasuda Hidehiro
Research Center For Ultra-high Voltage Electron Microscopy Osaka University
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Takeuchi K
Greduate School Of Science And Engineering Saitama University:riken (the Institute Of Physical And C
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SUGURO Kyoichi
ULSI Research Laboratories, TOSHIBA Corporation
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Shimizu Y
Tokyo Inst. Technol. Tokyo Jpn
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Shimizu Yasutaka
Graduate School Of Decision Science And Technology Tokyo Institute Of Technology
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Mori H
Osaka Univ. Osaka Jpn
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SEKINE MAKOTO
Research Institute of Innovative Technology for the Earth, NIBH Laboratory, AIST
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Baba Yoko
New Materials Research Center Sanyo Electric Co. Ltd.
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MAKITA Hiroshi
Kochi University of Technology
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MATSUI Kuniyuki
New Materials Research Center, SANYO Electric Co., Ltd.
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KOBAYASHI Masami
New Materials Research Center, SANYO Electric Co., Ltd.
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Takeuchi Kousuke
New materials Research Center, SANYO Electric Co., Ltd.
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HIRAO Yasuhiro
New Materials Research Center, SANYO Electric Co., Ltd.
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Okano Haruo
Research And Development Center
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Mori H
Research Center For Ultra-high Voltage Electron Microscopy Osaka University
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Yamabe Kikuo
Vlsi Research Center Toshiba Corp.
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Narita M
Akita Univ. Akita Jpn
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Mori Hirotaro
Research Center For Ultra-high Voltage Electron Microscopy Osaka University
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Teraishi Kazuo
Department Of Materials And Chemistry Graduate School Of Engineering Tohoku University
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Suguro Kyoichi
Ulsi Research Center Toshiba Corporation
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Suguro Kyoichi
Ulsi Research Laboratories Research And Development Center Toshiba Corporation
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TOYODA Hiroshi
ULSI Research Laboratories, Research and Development Center, Toshiba Corporation
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OKANO Haruo
Technology Center, Applied Materials Japan
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Shimizu Y
Osaka Univ. Osaka Jpn
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Hirao Yasuhiro
New Materials Research Center Sanyo Electric Co. Ltd.
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JIMBO Sadayuki
Research and Development Center, Toshiba Corporation
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SHIMOMURA Kouji
Research and Development Center, Toshiba Corporation
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OHIWA Tokuhisa
Research and Development Center, Toshiba Corporation
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MORI Haruki
Semiconductor Group, Toshiba Corporation
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HORIOKA Keiji
Research and Development Center, Toshiba Corporation
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HASEGAWA Isahiro
Semiconductor Group, Toshiba Corporation
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MATSUSHITA Takaya
Semiconductor Group, Toshiba Corporation
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SHIMOMURA Kouji
ULSI Research Center, Toshiba Corporation
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TANAKA Naoki
Functional Materials Research Center, SANYO Electric Co., Ltd.
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Hayasaka Nobuo
Vlsi Research Center Toshiba Corp.
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TAKAHASHI Yusuke
Functional Materials Research Center, SANYO Electric Co., Ltd.
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Matsushita Takaya
Semiconductor Group Toshiba Corporation
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Jimbo Sadayuki
Research And Development Center Toshiba Corporation
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NARITA Masaki
ULSI Research Laboratories, Research and Development Center, Toshiba Corporation
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HASEGAWA Isahiro
MOS Process Engineering Department, Toshiba Corp.
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ARIKADO Tsunetoshi
Toshiba VLSI Research Center
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HORIOKA Keiji
Toshiba VLSI Research Center
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Matsui Kuniyuki
New Materials Research Center Sanyo Electric Co. Ltd.
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Arikado Tsunetoshi
Toshiba Research And Development Center Toshiba Corporation
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Toyoda Hiroshi
Ulsi Research Laboratories Research And Development Center Toshiba Corporation
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Takahashi Yusuke
Functional Materials Research Center Sanyo Electric Co. Ltd.
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Kobayashi Masami
New Materials Research Center Sanyo Electric Co. Ltd.
著作論文
- GHz-Band Surface Acoustic Wave Devices Using the Second Leaky Mode on LiTaO_3 and LiNbO_3
- 1.9-GHz-Band Surface Acoustic Wave Device Using Second Leaky Mode on LiTaO_3
- Epitaxial AlN Thin Films Grown on α-Al_2O_3 Substrates by ECR Dual Ion Beam Sputtering
- Characteristics of Surface Acoustic Wave on AlN Thin Films
- Preparation of Aluminum Nitride Epitaxial Films by Electron Cyclotron Resonance Dual-Ion-Beam Sputtering ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Characteristics of AlN Thin Films Deposited by Electron Cyclotron Resonance Dual-Ion-Beam Sputtering and Their Application to GHz-Band Surface Acoustic Wave Devices
- In Situ Transmission Electron Microseopy Observation of Single Crystallization of Filled Aluminum Interconnection
- Formation of Single-Crystal Al Interconnection by In Situ Annealing
- Resist and Sidewall Film Rermoval after AT Reactive Ion Etching (RIE) Employing F+H_2O Downstream Ashing
- Influence of Al Surface Modification on Selectivity in Via-Hole Etching Employing CHF_3 Plasma
- GHz-Barud Surface Acoustic Wave Devices Using Aluminum Nitride Thin Films Deposited by Electron Cyclotron Resonance Dual Ion-Beam Sputtering
- Preparation of c-Axis Oriented AlN Thin Films by Low-Temperature Reactive Sputtering
- Orientation Control of AlN Film by Electron Cyclotron Resonance Ion Beam Sputtering
- A New High-Density Plasma Etching System Using A Dipole-Ring Magnet
- Gate Oxide Breakdown Phenomena in Magnetron Plasma
- SiO_2 Tapered Etching Employing Magnetron Discharge of Fluorocarbon Gas
- Single Silicon Etching Profile Simulation
- Radiation Damage Evaluation in Excimer Laser Beam Irradiation and Reactive Ion Etching
- Excimer Laser Photochemical Directional Etching of Phosphorous Doped Poly-Crystalline Silicon
- Photo-Excited Etching of Poly-Crystalline and Single-Crystalline Silicon in Cl_2 Atmosphere