Resist and Sidewall Film Rermoval after AT Reactive Ion Etching (RIE) Employing F+H_2O Downstream Ashing
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概要
- 論文の詳細を見る
The sidewall residue seen after Al etching and via-hole etching on an AI pattern was investigated. X-ray photo-electron spectroscopy (XPS) after O_2 plasma ashing revealed that this sidewall residue contained a large number of AT atoms sputtered from the Al film surface. A downstream ashing technique employing F atoms and water vapor has already been developed to remove the persistent resist after plasma processing or ion implantation, but even this downstream ashing could not remove the sidewall residue containing Al. It has been found that the downstream process changed Al and Al oxide in the residue to Al fluoride, a water-soluble compound. Thus, rinsing with DI water successfully removed the sidewall residue after downstream ashing.
- 社団法人応用物理学会の論文
- 1993-06-30
著者
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Mori H
Osaka Univ. Osaka Jpn
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SEKINE MAKOTO
Research Institute of Innovative Technology for the Earth, NIBH Laboratory, AIST
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MAKITA Hiroshi
Kochi University of Technology
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HORIOKA Keiji
The Institute of Scientific and Industrial Research, Osaka University
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Okano H
Applied Materials Japan Inc. Chiba Jpn
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Okano Haruo
Research And Development Center
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Mori H
Research Center For Ultra-high Voltage Electron Microscopy Osaka University
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Horioka Keiji
Ulsi Research Laboratories Research And Development Center Toshiba Corporation
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Sekine M
Association Of Super-advanced Electronics Technologies (aset):(present Address)process & Manufac
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Ohiwa T
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Shimomura K
Department Of Electrical And Electronic Engineering Sophia University
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JIMBO Sadayuki
Research and Development Center, Toshiba Corporation
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SHIMOMURA Kouji
Research and Development Center, Toshiba Corporation
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OHIWA Tokuhisa
Research and Development Center, Toshiba Corporation
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MORI Haruki
Semiconductor Group, Toshiba Corporation
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HORIOKA Keiji
Research and Development Center, Toshiba Corporation
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Jimbo Sadayuki
Research And Development Center Toshiba Corporation
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