Formation of Single-Crystal Al Interconnection by In Situ Annealing
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-06-30
著者
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SUGURO Kyoichi
ULSI Research Laboratories, TOSHIBA Corporation
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WADA Jun-ichi
ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory
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Wada Jun-ichi
Ulsi Research Laboratories Research And Development Center Toshiba Corporation
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Okano H
Applied Materials Japan Inc. Chiba Jpn
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Okano Haruo
Ulsi Research Center Toshiba Corp.
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Wada Jun-ichi
Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory
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Suguro Kyoichi
Ulsi Research Center Toshiba Corporation
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Suguro Kyoichi
Ulsi Research Laboratories Research And Development Center Toshiba Corporation
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HAYASAKA Nobuo
ULSI Research Center, Toshiba Corp.
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HAYASAKA Nobuo
Microelectronics Engineering Lab., Toshiba Corp.
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Hayasaka N
Microelectronics Engineering Lab. Toshiba Corp.
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Hayasaka Nobuo
Ulsi Research Center Toshiba Corp.
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