Ab Initio Molecular Orbital Study of Suppression of Water Absorption and Hydrolysis(F-Removal)of Chemical-Vapor-Deposited SiOF Films by Nitrogen Doping

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-08-15

著者

• Katsumata R

  Toshiba Corp. Kawasaki Jpn

• Katsumata Ryota

  Advanced Semiconductor Devices Research Labs. R&d Center Toshiba Corp.

• NAKASAKI Yasushi

  Advanced Semiconductor Devices Research Labs., R&D Center, Toshiba Corp.

• MIYAJIMA Hideshi

  Microelectronics Engineering Lab., Toshiba Corp.

• HAYASAKA Nobuo

  Microelectronics Engineering Lab., Toshiba Corp.

• Hayasaka N

  Microelectronics Engineering Lab. Toshiba Corp.

• Nakasaki Y

  Advanced Semiconductor Devices Research Labs. R&d Center Toshiba Corp.

• Miyajima H

  Seiko Epson Corp. Nagano Jpn

• Nakasaki Yasushi

  Advanced Semiconductor Devices Research Labs., R&D Center, Toshiba Corp.

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• Density Fluctuations Associated with Electromagnetic Waves in Ion Cyclotron Range of Frequencies
• In Situ Transmission Electron Microseopy Observation of Single Crystallization of Filled Aluminum Interconnection
• Formation of Single-Crystal Al Interconnection by In Situ Annealing
• Ab Initio Molecular Orbital Study of Suppression of Water Absorption and Hydrolysis(F-Removal)of Chemical-Vapor-Deposited SiOF Films by Nitrogen Doping
• Ab initio Molecular Orbital Study of Water Absorption and Hydrolysis of Chemical Vapor Deposited SiOF Films II
• Ab initio Molecular Orbital Study of Water Absorption and Hydrolysis of Chemical Vapor Deposited SiOF Films I
• Water Absorption Properties of Fluorine-Doped SiO_2 Films Using Plasma-Enhanced Chemical Vapor Deposition
• Fluorine Doped SiO_2 for Low Dielectric Constant Films in Sub-Half Micron ULSI Multilevel Interconnection

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