Water Absorption Properties of Fluorine-Doped SiO_2 Films Using Plasma-Enhanced Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-12-15
著者
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Katsumata R
Toshiba Corp. Kawasaki Jpn
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Katsumata Ryota
Advanced Semiconductor Devices Research Labs. R&d Center Toshiba Corp.
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Nishiyama Yukio
Faculty Of Engineering Hiroshima University
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Nishiyama Yukio
Advanced Ulsi Process Engineering Department Process & Manufacturing Engineering Center Toshiba
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HAYASAKA Nobuo
ULSI Research Center, Toshiba Corp.
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MIYAJIMA Hideshi
Microelectronics Engineering Lab., Toshiba Corp.
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HAYASAKA Nobuo
Microelectronics Engineering Lab., Toshiba Corp.
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NAKASAKI Yasushi
ULSI Research Labs., R & D Center, Toshiba Corp.
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KATSUMATA Ryota
ULSI Research Labs., R & D Center, Toshiba Corp.
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MIYAJIMA Hideshi
ULSI Research Laboratories, Research & Development Center, Toshiba Corporation
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NISHIYAMA Yukio
ULSI Research Laboratories, Research & Development Center, Toshiba Corporation
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Hayasaka N
Microelectronics Engineering Lab. Toshiba Corp.
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Hayasaka Nobuo
Ulsi Research Center Toshiba Corp.
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Nakasaki Y
Advanced Semiconductor Devices Research Labs. R&d Center Toshiba Corp.
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Miyajima H
Seiko Epson Corp. Nagano Jpn
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Nishiyama Yukio
Ulsi Research Laboratories Research & Development Center Toshiba Corporation:(present Address) Integrated Circuit Advanced Process Engineering Department Toshiba Corporation
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Katsumata Ryota
ULSI Research Labs. R & D Center, Toshiba Corp.
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Nakasaki Yasushi
ULSI Research Labs. R & D Center, Toshiba Corp.
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