High-Performance SiOF Film Fabricated Using a Dual-Frequency-Plasma Chemical Vapor Deposition system

概要

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With the use of a newly developed dual-frequency-plasma chemical vapor deposition (DFP-CVD) system, an advanced SiOF film of $k = 3.4$, which exhibits excellent resistance for moisture absorption, was developed. The physical and chemical properties of the SiOF film were compared to those of typical SiOF films deposited by both conventional high-density-plasma CVD (HDP-CVD) and plasma-enhanced CVD (PE-CVD) systems, with the same k value. The DFP-CVD SiOF film appears to be significantly superior to the HDP-CVD SiOF film, as revealed by the following results. The moisture absorption rate measured by thermal desorption spectroscopy (TDS) (after 4 days of air exposure) is about 5 times lower, the hardness was 1.8 times higher, and the hygroscopicity (after 1 hour of boiling) was 2.6 times lower. These results confirm that the DFP-CVD SiOF film is applicable to Al and Cu interconnect structures for devices of the 130 nm scale and beyond.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-09-15