Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks
スポンサーリンク
概要
著者
-
Eguchi Kazuhiro
Semiconductor Company Toshiba Corporation
-
Sekine Katsuyuki
Semiconductor Company Toshiba Corporation
-
Takayanagi Mariko
Semiconductor Company Toshiba Corporation
-
Nakasaki Yasushi
Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
-
Mitani Yuichiro
Corporate Research and Development Center, Toshiba Corporation, Yokohama 235-8522, Japan
-
Hirano Izumi
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
-
Yamaguchi Takeshi
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
-
Iijima Ryosuke
Corporate Research and Development Center, Toshiba Corporation, Yokohama 235-8522, Japan
関連論文
- Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States
- Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative-Bias Temperature Instability in HfSiON/SiO_2 Gate Stack
- Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON
- Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)
- The Highly Reliable Evaluation of Mobility in an Ultra Thin High-k Gate Stack with an Advanced Pulse Measurement Method
- Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces
- Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectrics
- High-Resolution Measurement of Ultra-Shallow Structures by Scanning Spreading Resistance Microscopy
- Work Function Modulation by Segregation of Indium through Tungsten Gate For Dual-Metal Gate CMOS Applications
- Study on Carrier Transport Limited by Coulomb Scattering due to Charged Centers in HfSiON MISFETs
- Electron Mobility Degradation Mechanisms in HfSiON MISFETs under the Real Operating Condition
- Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
- Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks
- Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane
- Characteristics of Defect Generation and Breakdown in SiO2 for Polycrystalline Silicon Channel Field-Effect Transistor
- High-Performance SiOF Film Fabricated Using a Dual-Frequency-Plasma Chemical Vapor Deposition system
- The Observation of "Conduction Spot" on NiO Resistance Random Access Memory
- Characterization of Low-$k$/Cu Damascene Structures Using Monoenergetic Positron Beams
- Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States
- Structural Studies of High-Performance Low-$k$ Dielectric Materials Improved by Electron-Beam Curing