Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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TSUNASHIMA Yoshitaka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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Tsunashima Yoshitaka
Process & Manufacturing Center Semiconductor Company Toshiba Corporation
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Sato Motoyuki
Process & Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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AOYAMA Tomonori
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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SEKINE Katsuyuki
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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YAMAGUCHI Takeshi
Research & Development Center, Toshiba Corporation
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HIRANO Izumi
Research & Development Center, Toshiba Corporation
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EGUCHI Kazuhiro
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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Hirano Izumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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SEKINE Katsuyuki
Semiconductor Company, Toshiba Corporation
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EGUCHI Kazuhiro
Semiconductor Company, Toshiba Corporation
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Eguchi Kazuhiro
Semiconductor Company Toshiba Corporation
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Yamaguchi Takeshi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Aoyama Tomonori
Process & Manufacturing Center Semiconductor Company Toshiba Corporation
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Sekine Katsuyuki
Semiconductor Company Toshiba Corporation
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TSUNASHIMA Yoshitaka
Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation
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