Low-Standby-Power Complementary Metal-Oxide-Semiconductor Transistors with TiN Single Gate on 1.8 nm Gate Oxide
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2003-10-01
著者
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Saito Tomohiro
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Nakajima Kazuaki
Process And Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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Matsuo Kouji
Process And Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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TSUNASHIMA Yoshitaka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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SUGURO Kyoichi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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Tsunashima Yoshitaka
Process & Manufacturing Center Semiconductor Company Toshiba Corporation
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Tsunashima Yoshitaka
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Suguro Kyoichi
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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SEKINE Katsuyuki
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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SUGURO Tomohiro
process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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Nakajima Kazuaki
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Sekine Katsuyuki
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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TSUNASHIMA Yoshitaka
Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation
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