Saito Tomohiro | Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.

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著作論文

Reduction of Accumulation Thickness in Metal Gate
Surface Channel Metal Gate Complementary MOS with Light Counter Doping and Single Work Function Gate Electrode
Sub-1.3 nm Amorphous Tantalum Pentoxide Gate Dielectrics for Damascene Metal Gate Transistors
Sub 1.3nm Amorphous Ta_2O_5 Gate Dielectrics for Damascene Metal Gate Transistor
Highly Uniform Low-Pressure Chemical Vapor Deposition (LP-CVD) of Si_3N_4 Film on Tungsten for Advanced Low-Resistivity "Polymetal" Gate Interconnects
Plasma-Damage-Free Gate Process Using Chemical Mechanical Polishing for 0.1 μm MOSFETs
Plasma Damage Free Gate Process Using CMP for 0.1um MOSFETs
Low-Standby-Power Complementary Metal-Oxide-Semiconductor Transistors with TiN Single Gate on 1.8 nm Gate Oxide
Surface Channel Metal Gate Complementary MOS with Light Counter Doping and Single Work Function Gate Electrode

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