Surface Channel Metal Gate Complementary MOS with Light Counter Doping and Single Work Function Gate Electrode

概要

論文の詳細を見る
We propose a channel engineering guideline for the low threshold voltage ($V_{\text{th}}$) metal oxide silicon field effect transistor (MOSFET) with metal gate, which is promising for highly miniaturized MOSFETs. For lowering $V_{\text{th}}$ of metal gate MOSFET, counter doping is useful. However, a buried channel with heavy counter doping has several disadvantages, such as the degradation of subthreshold swing. In this work, using a design with light counter doping, a surface channel complementary metal oxide silicon (CMOS) of low $V_{\text{th}}$ with a single work function gate electrode was successfully fabricated showing superior characteristics. Device simulation was used to investigate the impacts of the channel profile of such a device. It was found that using counter doping with low concentration to an optimized depth results in better subthreshold characteristics than that using shallow counter doping with high concentration. A lower counter dopant concentration also suppresses $V_{\text{th}}$ deviations. The damascene gate process was used in the fabrication.
Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
2001-04-30