Novel Pb(Ti,Zr)O_3(PZT) Crystallization Technique Using Flash Lamp for Ferroelectric RAM (FeRAM) Embedded LSIs and One Transistor Type FeRAM Devices
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-04-30
著者
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ARIKADO Tsunetoshi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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Yoshioka Masahiro
NMIJ AIST
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Yoshioka Masakazu
Kek National Laboratory For High Energy Physics
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Imai Keitaro
Feram Development Alliance Semiconductor Company Toshiba Corp.
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Imai Keitaro
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Arikado T
Semiconductor Leading Edge Technologies Inc.
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Yamakawa K
Japan Atomic Energy Agency
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YAMAKAWA Koji
Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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ARISUMI Osamu
Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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YOSHIOKA Masaki
Lamp Technology & Engineering Division, Ushio Inc.
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OWADA Tatsushi
Lamp Technology & Engineering Division, Ushio Inc.
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OKUMURA Katsuya
Research Center for Advanced Science and Technology, The University of Tokyo
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Arisumi Osamu
Feram Development Alliance Semiconductor Company Toshiba Corp.
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Owada Tatsushi
Lamp Technology And Engineering Division Ushio Inc.
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Okumura Katsuya
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.:(present)university
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Okumura Katsuya
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Yamakawa K
Advanced Photon Research Center Kansai Research Establishment Japan Atomic Energy Research Institute
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Yamakawa K
Department Of Quantum Engineering Nagoya University
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Arikado Tunetoshi
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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Arikado Tsunetoshi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Imai Keitaro
Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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