Lead Content Control in (Pb, La)(Zr, Ti)O3 Films Using Ar/O2 Sequential Rapid Thermal Process

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概要

• 論文の詳細を見る

• A new method of controlling the lead (Pb) profile in (Pb, La)(Zr, Ti)O3 (PLZT) capacitor films with top and bottom SrRuO3 (SRO) electrodes has been developed using an Ar/O2 sequential crystallization process. This new technique makes it possible to realize good fatigue properties and a low leakage current density in the films. We found that the gas ambient of the rapid thermal process (RTP) affects Pb evaporation behavior during PLZT crystallization; an Ar ambient promotes Pb evaporation more than an O2 ambient. The Ar/O2 sequential RTP was introduced on the basis of the optimum design of the Pb profile in crystallized PLZT films. A good ferroelectric capacitor with a Pt/SRO/PLZT/SRO/Pt structure was achieved by controlling the Pb composition in the bulk of PLZT films as well as at the interfaces to the electrodes, resulting in high endurance and low leakage current density.

• 2004-02-15

著者

• NAKAMURA Shin-ichi

  TOSHIBA CORPORATION Research and Development Center

• Imai Keitaro

  Feram Development Alliance Semiconductor Company Toshiba Corp.

• YAMAKAWA Koji

  FeRAM Development Alliance, Semiconductor Company, Toshiba Corp.

• Arisumi Osamu

  Feram Development Alliance Semiconductor Company Toshiba Corp.

• Moon Bum-ki

  Feram Development Alliance Infineon Technologies

• Arisumi Osamu

  FeRAM Development Alliance, Semiconductor Company, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

• Imai Keitaro

  FeRAM Development Alliance, Semiconductor Company, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

• Moon Bum-Ki

  FeRAM Development Alliance, Infineon Technologies, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

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• Ferroelectric Properties of Pb(Zi, Ti)O_3 Capacitor with Thin SrRuO_3 Films within Both Electrodes
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• Lead Content Control in (Pb, La)(Zr, Ti)O3 Films Using Ar/O2 Sequential Rapid Thermal Process

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