10-15nm Ultrashallow Junction Formation by Flash-Lamp Annealing
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概要
- 論文の詳細を見る
Flash-lamp annealing (FLA) technology, a new method of activating implanted impurities, is proposed. FLA is able to reduce the time of the heating cycle to within the millisecond range. With this technology, an abrupt profile is realized, with a dopant concentration that can exceed the maximum carrier concentration obtained by conventional rapid thermal annealing (RTA) or furnace annealing. In contrast to a laser annealing method, FLA can activate dopants in an 8-inch-diameter substrate and, simultaneously, strictly control diffusion of dopants so as not to melt the substrate surface by radiation. FLA presents the possibility of fabricating sub-0.1-μm MOSFETs with good characteristics. [DOI: 10.1143/JJAP.41.2394]
- 社団法人応用物理学会の論文
- 2002-04-30
著者
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ARIKADO Tsunetoshi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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MURAKOSHI Atsushi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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SUGURO Kyoichi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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Yoshioka Masahiro
NMIJ AIST
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Yoshioka Masakazu
Kek National Laboratory For High Energy Physics
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IMAOKA Yasuhiro
Development Department, Dainippon Screen Manufacturing Co., Ltd.
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Arikado T
Semiconductor Leading Edge Technologies Inc.
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Suguro K
Toshiba Corporation Semiconductor Company
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Suguro Kyoichi
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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OKUMURA Katsuya
Process & Manufacturing Engineering Center, Semiconductor Company Toshiba Corporation
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YOSHIOKA Masaki
Lamp Technology & Engineering Division, Ushio Inc.
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OWADA Tatsushi
Lamp Technology & Engineering Division, Ushio Inc.
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Owada Tatsushi
Lamp Technology And Engineering Division Ushio Inc.
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Imaoka Yasuhiro
Development Department For Electronics Equipment Dainippon Screen Mfg. Co. Ltd.
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Okumura Katsuya
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.:(present)university
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AKUTSU Haruko
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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IINUMA Toshihiko
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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Murayama Hiromi
Development Department For Electronics Equipment Dainippon Screen Mfg. Co. Ltd.
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ITO Takayuki
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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KUSUDA Tatsuhumi
Development Department for Electronics Equipment, Dainippon Screen Mfg. Co. Ltd.
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Akutsu Haruko
Toshiba Corporation Semiconductor Company
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Iinuma Toshihiko
Toshiba Corporation Semiconductor Company
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Kusuda Tatsuhumi
Development Department For Electronics Equipment Dainippon Screen Mfg. Co. Ltd.
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Murakoshi Atsushi
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Ito Takayuki
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Suguro Kyoichi
Toshiba Corporation Semiconductor Company
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Arikado Tunetoshi
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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Murakoshi Atsushi
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
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Arikado Tsunetoshi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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