Study of LOCOS-Induced Anomalous Leakage Current in Thin Film SOI MOSFET's
スポンサーリンク
概要
- 論文の詳細を見る
Anomalous leakage current which flows between source and drain in thin film SOI MOSFET's is investigated. It is confirmed that the leakage current is caused by enhanced diffusion of the source/drain dopants along the LOCOS-induced crystal defects. Stress analysis by 2D simulation reveals that thinning a buried-oxide effectively suppresses deformation of an SOI film associated with over-oxidation during LOCOS. It is experimentally confirmed that using a SIMOX substrate which has a thinner buried-oxide causes no noticeable deformation of the SOI film nor anomalous leakage current.
- 社団法人電子情報通信学会の論文
- 1999-07-25
著者
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Onga Shinji
Advanced Semiconductor Device Lab. R&d Center
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Shino Tomoaki
Advanced Semiconductor Device Lab. R&d Center Kawasaki
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Yoshimi Makoto
Advanced Semiconductor Devices Research Laboratories Toshiba Corporation
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Yoshimi Makoto
Advanced Semiconductor Device Lab. R&d Center
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KAWANAKA Shigeru
Advanced Semiconductor Device Lab., R&D Center
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OKADA Takako
Advanced Semiconductor Device Lab., R&D Center
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OOSE Michihiro
Environmental Engineering Lab., R&D Center
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IINUMA Toshihiko
Microelectronics Engineering Lab., Toshiba Corporation
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YAMADA Takashi
Advanced Semiconductor Device Lab., R&D Center
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WATANABE Shigeyoshi
Advanced Semiconductor Device Lab., R&D Center
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Watanabe Shigeyoshi
Advanced Semiconductor Device Lab. R&d Center
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Iinuma Toshihiko
Toshiba Corporation Semiconductor Company
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Okada Takako
Advanced Semiconductor Device Lab. R&d Center
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Oose Michihiro
Environmental Engineering Lab. R&d Center
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Kawanaka Shigeru
Advanced Semiconductor Device Lab. R&d Center
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Yamada Takashi
Advanced Semiconductor Device Lab. R&d Center
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