Evaluation of 0.3μm Poly-Silicon CMOS Circuits for Intelligent Power IC Application

スポンサーリンク

概要

論文の詳細を見る
1997-09-16

著者

関連論文

Effects of Cleavage on Local Cross-Sectional Stress Distribution in Trench Isolation Structure
Effects of Cleavage on Local Cross-Sectional Stress Distribution in Trench Isolation Structure
0.8 μm CMOS Process Compatible 60 V-100 mΩ・mm^2 Power MOSFET on Bonded SOI
0.8μm CMOS Process Compatible 60V - 100mΩ・mm^2 Power MOSFET on Bonded SOI
Evaluation of 0.3μm Poly-Silicon CMOS Circuits for Intelligent Power IC Application
Analysis of Si-Ge Source Structure in 0.15 μm SOI MOSFETs Using Two-Dimensional Device Simulation
Analysis of Si-Ge Source Structure in 0.15μm SOI MOSFETs Using Two-Dimensional Device Simulation
25V - 13mΩ・mm^2 Low On-Resistance Novel Structure Trench Gate LDMOS
Electrical Characteristics of Polysilicon CMOS Analog and Driver Circuits for Intelligent IGBTs
Study of LOCOS-Induced Anomalous Leakage Current in Thin Film SOI MOSFET's
Evaluation of 0.3μm Poly-Silicon CMOS Circuits for Intelligent Power IC Application
An Ultra Low Voltage SOI CMOS Pass-Gate Logic (Special Issue on SOI Devices and Their Process Technologies)
Electron Traps in Si p^+nn^+ Diodes Created by 10 MeV Electron Irradiation

もっと見る

スポンサーリンク