Yoshimi M | R&d Center Kawasaki‐shi Jpn

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著作論文

Evaluation of 0.3μm Poly-Silicon CMOS Circuits for Intelligent Power IC Application
Analysis of Si-Ge Source Structure in 0.15 μm SOI MOSFETs Using Two-Dimensional Device Simulation
Analysis of Si-Ge Source Structure in 0.15μm SOI MOSFETs Using Two-Dimensional Device Simulation
Evaluation of 0.3μm Poly-Silicon CMOS Circuits for Intelligent Power IC Application
An Ultra Low Voltage SOI CMOS Pass-Gate Logic (Special Issue on SOI Devices and Their Process Technologies)

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