Matsuzawa Kazuya | Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

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概要

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著作論文

Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
Analysis of Si-Ge Source Structure in 0.15 μm SOI MOSFETs Using Two-Dimensional Device Simulation
Analysis of Si-Ge Source Structure in 0.15μm SOI MOSFETs Using Two-Dimensional Device Simulation
Impact of Strained-Si Channel on Complementary Metal Oxide Semiconductor Circuit Performance under the Sub-100 nm Regime
Impact of Strained-Si Channel on CMOS Circuit Performance under the Sub-100nm Regime
A New Design Scheme for Logic Circuits with Single Electron Transistors
Impact of Two-Dimensional Structure of nMOSFETs on Direct Tunnel Gate Current
Monte Carlo Simulation of Sub-0.1μm Devices with Schottky Contact Model (Special lssue on SISPAD'99)
Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
Impact of Electron Heat Conductivity on Electron Energy Flux(the IEEE International Conference on SISPAD '02)
Simulation Technique of Heating by Contact Resistance for ESD Protection Device(the IEEE International Coference on SISPAD '02)
Impact of Random Dopant Fluctuation on Size-Dependence of Contact Resistance

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