Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
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概要
- 論文の詳細を見る
A new model of the roughness correlation function S(r) has been proposed in order to explain the different behavior of high field mobility limited by surface roughness scattering, μ_<SR>, between electrons and holes in metal oxide semiconductor field effect transistors (MOSFETs) with oxynitrides. It has been shown, for the first time, that the change in electron and hole μ_<SR> associated with NO oxynitridation can be reasonably well explained by the appropriate choice of the form of S(r). [DOI: 10.1143/JJAP.41.2353]
- 社団法人応用物理学会の論文
- 2002-04-30
著者
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center (starc)
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Matsuzawa Kazuya
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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Matsuzawa Kazuya
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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TAKAYANAGI Mariko
Semiconductor Company, Toshiba Corporation
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Ishihara Takamitsu
Advanced Lsi Technology Laboratory Corporate Research & Development Center
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Ishihara T
Hyogo Prefectural Institute Of Industrial Research
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Takayanagi Mariko
System Lsi Research & Development Center Semiconductor Company Toshiba Corporation
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiha Corporation
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Takayanagi Mariko
Semiconductor Company Toshiba Corporation
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