Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in Metal Oxide Semiconductor Field Effect Transistors with N2O and NO Oxynitrides
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概要
- 論文の詳細を見る
A new model for electron mobility limited by Coulomb scattering, $\mu_{\text{c}}$, for metal oxide semicunductor field effect transistors (MOSFETs) with N2O and NO oxynitrides has been proposed. It is shown that this model accurately represents the experimental mobility behavior, such as the difference of $\mu_{\text{c}}$ between pure oxides and oxynitrides and the dependence on the inversion layer electron density, using physically appropriate parameters of Coulomb scattering centers. The effects of the location of fixed charges and the multi-subband occupation are examined to investigate the physical meaning of this new model.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-30
著者
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ISHIHARA Takamitsu
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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Kondo Masaki
Semiconductor company, System LSI Division, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokoham
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Ishihara Takamitsu
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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Ishihara Takamitsu
Advanced Lsi Technology Laboratory Corporate Research & Development Center
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Kondo Masaki
Semiconductor Company System Lsi Division Toshiba Corporation
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiha Corporation
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