Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness

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概要

• 論文の詳細を見る
• 2001-09-25

著者

• Matsuzawa Kazuya

  Semiconductor Technology Academic Research Center (starc)

• Matsuzawa Kazuya

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation

• Matsuzawa Kazuya

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• Takagi Shin-ichi

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation

• TAKAYANAGI Mariko

  Advanced CMOS Technology Dept., Center for Semiconductor Research & Development, Semiconductor Compa

• Ishihara Takamitsu

  Advanced Lsi Technology Laboratory Corporate Research & Development Center

• Ishihara T

  Hyogo Prefectural Institute Of Industrial Research

• Takayanagi Mariko

  Advanced Cmos Technology Dept. Center For Semiconductor Research & Development Semiconductor Com

• Takayanagi Mariko

  System Lsi Research & Development Center Semiconductor Company Toshiba Corporation

• Takagi Shin-ichi

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiha Corporation

関連論文

• Influence of Thermal Noise on Drain Current in Very Small Si-MOSFETs
• Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs
• Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures:A Monte Carlo Study
• Triboluminescence of (Sr,Ba)Al_2O_4 Polycrystals Doped with Eu^ and Eu^
• Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
• Novel Fabrication Technique for Relaxed SiGe-on-Insulator Substrates without Thick SiGe Buffer Structures
• A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100nm Strained Silicon-on-Insulator MOSFETs
• A Novel Fabrication Technique of Ultra-Thin and Relaxed SiGe Buffer Layers with High Ge Content for Sub-100nm Strained Silicon-on-Insulator MOSFETs
• Influence of High Dielectric Constant in Gate Insulator on Remote Coulomb Scattering due to Gate Impurities in Si MOS Inversion Layer
• Physical Origins of Surface Carrier Density Dependences of Interface- and Remote-Coulomb Scattering Mobility in Si MOS Inversion Layer
• Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs
• Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides
• Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
• New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon
• Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films
• Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films
• Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
• Probability Distribution of Threshold Voltage Fluctuations in Metal-OXide-Semiconductor Field-Effect-Transistors : Semiconductors
• Shadowing Pattern Imaging with High-Energy Secondary Electrons Induced by Fast Ions
• Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
• Improvement of Memory Characteristics of MFIS Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
• Self-consistent Calculation of the Quasi-particle Energy Spectrum of Sodium using the Correlated Hartree-Fock Method
• Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative-Bias Temperature Instability in HfSiON/SiO_2 Gate Stack
• Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON
• Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)
• The Highly Reliable Evaluation of Mobility in an Ultra Thin High-k Gate Stack with an Advanced Pulse Measurement Method
• Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces
• Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectrics
• Fracto-Luminescence of Rare Earth Element-Doped Hexacelsian (BaAl_2Si_20_8)
• Synthesis and Optical Properties of Transparent LiAl_5O_8 : Co^ Films by the Sol-Gel Method
• Analysis of Si-Ge Source Structure in 0.15 μm SOI MOSFETs Using Two-Dimensional Device Simulation
• Analysis of Si-Ge Source Structure in 0.15μm SOI MOSFETs Using Two-Dimensional Device Simulation
• High-Resolution Measurement of Ultra-Shallow Structures by Scanning Spreading Resistance Microscopy
• Planar Shadowing of Fast Ion Beams in Si and Ge Crystals Bombarded with 5 keV Ar^+
• High-Sensitivity Channeling Analysis of Lattice Disorder Near Surfaces Using Secondary Electrons Induced by Fast Ions
• Characterization of Epitaxially Grown CeO_2(110) Layers on Si by Means of Shadowing Pattern Imaging with Fast Ion Beams
• Surface Layer Analysis of Sputter-Etched Si Using Secondary Electrons Induced by Fast Ions
• Determination of the Crystallographic Polarity of Zincblende Structure by Using Ion-Induced Secondary Electrons
• Asymptotic Analysis of Acoustic Field by Geometrical Theory of Diffraction in Antiwaveguide Propagation
• Pulsed Laser Deposition of Crystalline Indium Tin Oxide Films at Room Temperature by Substrate Laser Irradiation
• Pulsed Laser Deposition of Low-Resistivity Indium Tin Oxide Thin Films at Low Substrate Temperature
• Low Gate-Induced Drain Leakage and Its Physical Origins in Si Nanowire Transistors
• Study on Carrier Transport Limited by Coulomb Scattering due to Charged Centers in HfSiON MISFETs
• Electron Mobility Degradation Mechanisms in HfSiON MISFETs under the Real Operating Condition
• Impact of Strained-Si Channel on Complementary Metal Oxide Semiconductor Circuit Performance under the Sub-100 nm Regime
• Impact of Strained-Si Channel on CMOS Circuit Performance under the Sub-100nm Regime
• A New Design Scheme for Logic Circuits with Single Electron Transistors
• Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in Metal Oxide Semiconductor Field Effect Transistors with N2O and NO Oxynitrides
• Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in MOSFETs with N_2O and NO Oxynitrides
• Impact of Two-Dimensional Structure of nMOSFETs on Direct Tunnel Gate Current
• Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current
• Monte Carlo Simulation of Sub-0.1μm Devices with Schottky Contact Model (Special lssue on SISPAD'99)
• Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
• Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
• Impact of Electron Heat Conductivity on Electron Energy Flux(the IEEE International Conference on SISPAD '02)
• Experimental Evaluation of Coulomb-Scattering-Limited Inversion-Layer Mobility of n-type Metal–Oxide–Semiconductor Field-Effect Transistors on Si(100), (110), and (111)-Surfaces: Impact of Correlation between Conductivity Mass and Normal Mass
• Simulation Technique of Heating by Contact Resistance for ESD Protection Device(the IEEE International Coference on SISPAD '02)
• Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide MOSFETs with Direct Tunneling Current
• Subband Structure Engineering for Realizing Scaled CMOS with High Performance and Low Power Consumption(Special Issue on Advanced Sub-0.1μm CMOS Devices)
• Self-consistent Calculation of the Quasi-particle Energy Spectrum of Sodium using the Correlated Hartree–Fock Method
• Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuations in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors
• Impact of Random Dopant Fluctuation on Size-Dependence of Contact Resistance
• Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer
• Coulomb and Phonon Scattering Processes in Metal–Oxide–Semiconductor Inversion Layers: Beyond Matthiessen's Rule

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