Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• Takagi S

  Process & Manufacturing Center Semiconductor Company Toshiba Corporation

• ISHIHARA Takamitsu

  Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation

• KOGA Junji

  Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation

• TAKAGI Shin-ichi

  Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo

• UCHIDA Ken

  Advanced LSI Technology Laboratory, Research & Development Center, Toshiba Corporation

• Koga J

  Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation

• Koga Junji

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

• Uchida K

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Ishihara Takamitsu

  Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation

• Ishihara Takamitsu

  Advanced Lsi Technology Laboratory Corporate Research & Development Center

• Uchida Ken

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Takagi Shin-ichi

  Department Of Electrical Engineering University Of Tokyo

• Uchida Ken

  Corporate R&d Center Toshiba Corporation

• Uchida Ken

  Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

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