Ishihara Takamitsu | Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation

スポンサーリンク

概要

• ISHIHARA Takamitsuの詳細を見る
• 同名の論文著者
• Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporationの論文著者

関連著者

• Takagi S

  Process & Manufacturing Center Semiconductor Company Toshiba Corporation

• ISHIHARA Takamitsu

  Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation

• KOGA Junji

  Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation

• Koga J

  Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation

• Koga Junji

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

• Ishihara Takamitsu

  Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation

• Ishihara Takamitsu

  Advanced Lsi Technology Laboratory Corporate Research & Development Center

• TAKAGI Shin-ichi

  Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo

• Takagi Shin-ichi

  Department Of Electrical Engineering University Of Tokyo

• NAKABAYASHI Yukio

  Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation

• Nakabayashi Yukio

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Nakabayashi Yukio

  Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation

• SHIMIZU Takashi

  Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation

• UCHIDA Ken

  Advanced LSI Technology Laboratory, Research & Development Center, Toshiba Corporation

• Uchida K

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Uchida Ken

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Uchida Ken

  Corporate R&d Center Toshiba Corporation

• Uchida Ken

  Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

もっと見る 閉じる

著作論文

• Influence of High Dielectric Constant in Gate Insulator on Remote Coulomb Scattering due to Gate Impurities in Si MOS Inversion Layer
• Physical Origins of Surface Carrier Density Dependences of Interface- and Remote-Coulomb Scattering Mobility in Si MOS Inversion Layer
• Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs
• Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides

スポンサーリンク