Influence of High Dielectric Constant in Gate Insulator on Remote Coulomb Scattering due to Gate Impurities in Si MOS Inversion Layer

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• NAKABAYASHI Yukio

  Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation

• Takagi S

  Process & Manufacturing Center Semiconductor Company Toshiba Corporation

• ISHIHARA Takamitsu

  Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation

• SHIMIZU Takashi

  Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation

• KOGA Junji

  Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation

• Koga J

  Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation

• Koga Junji

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

• Ishihara Takamitsu

  Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation

• Ishihara Takamitsu

  Advanced Lsi Technology Laboratory Corporate Research & Development Center

• Nakabayashi Yukio

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Nakabayashi Yukio

  Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation

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