Experimental Study of Uniaxial Stress Effects on Coulomb-limited Electron and Hole Mobility in Si-MOSFETs
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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NAKABAYASHI Yukio
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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UCHIDA Ken
Tokyo Institute of Technology
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UCHIDA Ken
Advanced LSI Technology Laboratory, Research & Development Center, Toshiba Corporation
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Saitoh Masumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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KOBAYASHI Shigeki
Advanced LSI Technology Laboratory, Toshiba Corporation
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Nakabayashi Yukio
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Kobayashi Shigeki
Advanced Lsi Technology Laboratory Toshiba Corporation
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Uchida Ken
Advanced Lsi Technology Laboratory Toshiba Corporation
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Uchida Ken
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Saitoh Masumi
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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