Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuations in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors
スポンサーリンク
概要
- 論文の詳細を見る
A unified model of roughness scattering in single-gate silicon-on-insulator metal–oxide–semiconductor field-effect transistors is proposed based on a formulation suitable for perturbation theory. This unified model includes the roughness scattering model both in bulk MOSFETs and in thin SOI MOSFETs. The SOI-thickness-fluctuation-induced scattering component is naturally derived from the proposed roughness scattering model. The experimentally observed dependence of inversion layer mobility on SOI thickness in thin SOI MOSFETs is explained well by the proposed roughness scattering model.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Koga Junji
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Ishihara Takamitsu
Advanced Lsi Technology Laboratory Corporate Research & Development Center
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Takagi Shin-ichi
Department Of Electrical Engineering University Of Tokyo
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Uchida Ken
Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Uchida Ken
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Takagi Shin-ichi
Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Koga Junji
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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