Interface Analysis of Al_2O_3/InP Structure Prepared by Molecular Beam Deposition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1987-10-20

著者

• SUGANO Takuo

  Department of Electrical and Electronic Engineering, Toyo University

• TAKAGI Shin-ichi

  Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo

• NAKASHIMA Hisao

  Optoelectronics Joint Research Laboratory

• Ohyama Hideaki

  Department Of Physics Faculty Of Science Science University Of Tokyo

• Narusawa Tadashi

  Optoelectronics Joint Research Laboratory

• Narusawa Tadashi

  Optoelectronics Joint Research Laboratory:(present Address) Kawasaki Laboratory Optoelectronics Deve

• Nakashima Hisao

  Optoelectronics Joint Research Laboratory:(present Address) Institute Of Scientific And Industrial R

• Sugano Takuo

  Department Of Electrical Engineering University Of Tokyo

• Takagi Shin-ichi

  Department Of Electrical Engineering University Of Tokyo

関連論文

• Beating of the Shubnikov-de Haas Oscillations in GaAs/AlGaAs Quantum-Dot Arrays
• Physical Origins of Surface Carrier Density Dependences of Interface- and Remote-Coulomb Scattering Mobility in Si MOS Inversion Layer
• Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs
• Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides
• Comparison of Lateral Resolution of Fine Stripes Beryllium and Boron Implanted by Focused Ion Beam in Si-Doped AlGaAs/GaAs Multiquantum Wells
• Electrical and Optical Properties of Si Doped GaAs Grown by Molecular Beam Epitaxy on (311) Substrates
• Disordering of Surface Regions in Si-Implanted Superlattices of GaAs/AlGaAs
• Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused si Ion Beam Implantation
• Fabrication of Index-Guided AlGaAs MQW Lasers by Selective Disordering Using Be Focused Ion Beam Implantation
• SIMS Study of Si-Be Co-doping Effects for Suppression of Compositional Disordering in AlGaAs-GaAs Superlattices
• Fabrication of Index-Guided AlGaAs Multiquantum Well Lasers with Buried Optical Guide by Si-Induced Disordering
• Implantation Energy Dependence of Composilional Disordering in Si Implanted GaAs/AlGaAs Superlattices Studied by Secondary Jon Mass Speetrometry
• SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs-GaAs Superlattice
• Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices ( Quantum Dot Structures)
• Single Electron Device with Asymmetric Tunnel Barriers
• A Perspective on Next-Generation Silicon Devices
• Ion-Implantation Induced Damage in Al_xGa_As and Superlattices Studied by Rutherford Backscattering
• Damage Profile in GaAs, AlAs, AlGaAs, and GaAs/AlGaAs Superlattices Induced by Si^+-Ion Implantation
• A Model for DX Centers : Bond Reconstruction due to Local Random Donor-Host Atom Configurations in Mixed Semiconductor Alloys
• GaAs MESFET's with a Thermally Stable LaB_6 Self-Aligned Gate
• Study of Thermal Stability of LaB_6 and GaAs Interfaces by High Energy Ion Scattering
• AlGaAs Window Stripe Buried Multiquantum Well Lasers
• Cross Sectional Transmission Electron Microscopy of Zn Diffusion Induced Disordering of GaAlAs-GaAs Multiquantum-Well Structures
• AlGaAs/GaAs Multiquantum Well Lasers with Buried Multiquantum Well Optical Guide
• Photoluminescence from AlGaAs-GaAs Single Quentum Wells with Growth Interrupted Heterointerfaces Grown by Molecular Beam Epitaxy
• Surface Defect Formation in GaAs Layers Grown on Intentionally Contaminated Substrate by Molecular Beam Epitaxy
• AlGaAs/GaAs Buried Multiquantum Well Lasers with a Reactive Ion Etched Window Facet
• Electron Mobility in In_Ga_xAs Epitaxial Layer
• Calculations of Energy Levels of Oxygen and Silicon Vacancies at the Si-SiO_2 Interface
• Fabrication of Josephson Weak Links Using Electron Beam Lithography and Ion-Etching, and Proposal of a New Single Flux Quantum Logic : C-2: JOSEPHSON DEVICES
• Interface Analysis of Al_2O_3/InP Structure Prepared by Molecular Beam Deposition
• High Energy Ion Channeling Study of MBE-Grown GaAs(001) Surface Structures
• Fabrication of Step-Edge Junctions on the Concave or Convex Side of YBa_2Cu_3O_ Film
• Magnetic and Electrical Properties of Vacuum-Deposited CdCr_2Se_4 Thin Film
• Low-Temperature Photoluminescence of Lightly 81-Doped Al_xGa_As on (511) GaAs Substrates Grown by Molecular Beam Epitaxy
• Studies on Chemically Etched Silicon, Gallium Arsenide, and Gallium Phosphide Surfaces by Auger Electron Spectroscopy
• Ordered Structure and Ion Migration in Silicon Dioxide Films
• Hall Mobility of Electrons in Silicon Surface Inversion Layers
• Galvanomagnetic Effects in Silicon Surface Inversion Layers
• Mobility of Magnetic Domain Wall of Strip Domain in Garnet Crystal : Computer Simulation and Measurement : B-2: BUBBLE DEVICES (II)
• Optical Properties of Vacuum-Deposited CdCr_2Se_4 Thin Film
• Effects of PAs_xN_y Deposition Conditions and the Cd Concentration in the Substrates on the Characteristics of In_Ga_As Metal-Insulator-Semiconductor Field Effect Transistors : Special Section : Solid State Devices and Materials 2 : III-V Comp
• Deep Level Transient Spectroscopy of Bulk Traps and Interface States in Si MOS Diodes
• Epitaxial Growth of SiC Film on Silicon Substrate and Its Crystal Structure
• Photoluminescenee from AlGaAs-GaAs Single Quantum Welts with Growth Interrupted Heleroinlerfaces Grown on GaAs (100) and (311) Substrates at Various Growth Temperatures by Molecular Beam Epitaxy
• Photoluminescence Study of GaAs-AlGaAs Multiquantum Well Grown by Molecular-Beam Epitaxy
• Fabrication of Bi_2Sr_2CaCu_2O_x High T_c Superconducting Film with H_2O Assisted Metalorganic Chemical Vapor Deposition
• Vapor Deposition of Silicon Nitride Film on Silicon and Properties of MNS Diodes
• Physical and Technological Limits in Size of Semiconductor Devices : E-2: PHYSICAL AND TECHNOLOGICAL LIMITS OF HIGH-DENSITY INTERGRATION
• Forward Characteristics of Si Schottky Diodes
• Plasma-Oxidized Tunnel Barrier of Nb/Nb Josephson Junctions with Copper Interlayer
• Scattering of Electrons by Potential Clusters in Ternary Alloy Semiconductor
• Proposal for Criterion on Deformation of III-V Ternary Alloy Crystal Lattice
• Chemical Deposition of Mo on Si
• Magnetic Modulation of Critical Current in MB DC-SQUID
• Fabrication of Si-Mo-Si Three Layer Structure and Its Current Transfer Characteristics
• Anodization of Silicon in RF Induced Oxygen Plasma : A-2: MOS DEVICES/BASIC ASPECTS
• Hot Electron-Phonon Interaction in Metals
• Defect-Free Reactive Ion Etching of Silicon by SiF_4/Cl_2 Plasma
• Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuations in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors
• Thermodynamical Calculation and Experimental Confirmation of the Density of Hole Traps in SiO_2 Films
• Beating of the Shubnikov-de Haas Oscillations in GaAs/AlGaAs Quantum-Dot Arrays
• Physical Origin of Drive Current Enhancement in Ultra-thin Ge-On-Insulator (GOI) MOSFETs under Full Ballistic Transport
• Cascade Model for Reduction of Field-Effect Mobility of Electrons in Lightly Doped Channel of Submicron Gate Si Thin-Film Field-Effect Transistors
• Schottky Interface Formation between LaB6 and GaAs(001) Covered with a Native-Oxide Layer
• Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices

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