Damage Profile in GaAs, AlAs, AlGaAs, and GaAs/AlGaAs Superlattices Induced by Si^+-Ion Implantation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1986-05-20
著者
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MATSUI Kensuke
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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MATSUI Ken-ichi
Department of Physics, Faculty of Science, Osaka University
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NAKASHIMA Hisao
Optoelectronics Joint Research Laboratory
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FUKUNAGA Toshiaki
Optoelectronics Joint Research Laboratory
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MATSUI Kazunori
Optoelectronics Joint Research Laboratory
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BAMBA Yasuo
Optoelectronics Joint Research Laboratory
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FUKUNAGA Tsuneshi
Department of Materials Science and Ceramic Technology, Shonan Institute of Technology
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BAMBA Yasuo
Fujitsu Laboratories Ltd.
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Narusawa Tadashi
Optoelectronics Joint Research Laboratory
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Narusawa T
Matsushita Res. Inst. Tokyo Kawasaki Jpn
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Bamba Y
Fujitsu Laboratories Ltd.
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Bamba Yasuo
Fujitsu Laboratories Limited
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TAKATANI Shin-ichiro
Central Research Laboratory, Hitachi, Lid.
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Takatani Shin-ichiro
Central Research Laboratory Hitachi Lid.
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Fukunaga T
New Cosmos Electric Co. Ltd. Osaka Jpn
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Matsui Kazunori
Department Of Chemistry College Of Engineering Kanto Gakuin University
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