Low-Temperature Photoluminescence of Lightly 81-Doped Al_xGa_<1-x>As on (511) GaAs Substrates Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
The low-temperature (1.8 K) photoluminescence of lightly Si-doped Al_xGa_<1-x>As on (100), (511)B and (511)A GaAs substrates grown by molecular beam epitaxy (MBE) has been studied. Strong orientation dependence of defect complex (d) emission has been observed in Si-doped (N_D-N_=10<17>cm^<-3>) AlGaAs samples. This orientation dependence in AlGaAs samples strongly suggests that the (d) line is related to defect complexes induced by Si atoms and is highly sensitive to the surface configuration of atoms during MBE growth.
- 社団法人応用物理学会の論文
- 1987-06-20
著者
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TAKAMORI Takeshi
Optoelectronics Joint Research Laboratory
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NAKASHIMA Hisao
Optoelectronics Joint Research Laboratory
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FUKUNAGA Toshiaki
Optoelectronics Joint Research Laboratory
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FUKUNAGA Tsuneshi
Department of Materials Science and Ceramic Technology, Shonan Institute of Technology
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Nakashima H
Hyogo University
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Fukunaga T
New Cosmos Electric Co. Ltd. Osaka Jpn
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Takamori T
Opto-electronics Laboratories R&d Group Oki Electric Industry Co. Ltd.
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