Diffusion of Electrically-Active Cobalt in Silicon
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概要
- 論文の詳細を見る
The annealing of supersaturated cobalt in silicon was studied by measuring the cobalt concentration as a function of the annealing time. The diffusion of electrically-active cobalt in silicon is governed by the interstitial cobalt concentration.
- 社団法人応用物理学会の論文
- 1988-09-20
著者
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Nakashima Hiroshi
Department Of Cardiology Nagasaki Citizens Hospital
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HASHIMOTO Kimio
Department of Pathology, Nishi-Kobe Medical Center
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Hamamoto K
Univ. Tokyo Tokyo Jpn
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HASHIMOTO Kouji
Department of General Pediatrics and Pediatric Rheumatology, Nihon University Nerima-Hikarigaoka Hos
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Hashimoto Kimio
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Nakashima H
Hyogo University
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Nakashima Hideharu
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Nakashima Hiroshi
Department Of Biology Faculty Of Science Okayama University
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