Note on the Analysis of DLTS and C^2-DLTS
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概要
- 論文の詳細を見る
The difference in the peak temperatures of DLTS and C^2-DLTS is discussed with reference to the measurement of deep levels in semiconductors. The emission rate of a trap level can be accurately determined when the peak temperature observed in DLTS agrees with that in C^2-DLTS. When the peak temperatures disagree, the trap depth and trap density cannot be determined correctly, and the junction profile and trap density have a great etrect on the peak temperatures of DLTS and C^2-DLTS. These phenomena appear in DLTS and C^2-DLTS measurements on Audoped Si p^+n diodes. It is necessary to use C^2-DLTS together with DLTS in the studv of deep impurities in semiconductors.
- 社団法人応用物理学会の論文
- 1982-01-05
著者
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Nakashima Hiroshi
Department Of Cardiology Nagasaki Citizens Hospital
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HASHIMOTO Kimio
Department of Pathology, Nishi-Kobe Medical Center
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Hamamoto K
Univ. Tokyo Tokyo Jpn
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TOMOKAGE Hajime
Department of Electronics, Fukuoka University
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Hashimoto Kimio
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Tomokage H
Fukuoka Univ. Fukuoka Jpn
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Tomokage Hajime
Department Of Electronics Fukuoka University
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Tomokage Hajime
Department Of Electronics Faculty Of Engineering Fukuoka University
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Tomokage Hajime
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Nakashima Hiroshi
Department Of Biology Faculty Of Science Okayama University
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