Tomokage Hajime | Department Of Electronics Fukuoka University

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概要

• 同名の論文著者
• Department Of Electronics Fukuoka Universityの論文著者

関連著者

• Tomokage H

  Fukuoka Univ. Fukuoka Jpn

• Tomokage Hajime

  Department Of Electronics Fukuoka University

• Tomokage Hajime

  Department Of Electronics Faculty Of Engineering Fukuoka University

• TOMOKAGE Hajime

  Department of Electronics, Fukuoka University

• Tomokage Hajime

  Department Of Electrical Engineering Faculty Of Engineering Kyushu University

• Yoshida M

  Functional Materials Research Laboratories Nec Corporation

• Yoshida M

  Yoshida Semiconductor Lab. Fukuoka Jpn

• YOSHIDA Masayuki

  Kyushu Institute of Design

• Yoshida M

  National Institute Of Advanced Industrial And Science Technology (aist)

• MOROOKA Masami

  Department of Electrical Engineering, Fukuoka Institute of Technology

• 師岡 正美

  福岡工業大学電気工学科

• Morooka Masami

  Department Of Electrical Engineering Fukuoka Institute Of Technology

• Nakashima Hiroshi

  Department Of Cardiology Nagasaki Citizens Hospital

• HASHIMOTO Kimio

  Department of Pathology, Nishi-Kobe Medical Center

• Hamamoto K

  Univ. Tokyo Tokyo Jpn

• Hashimoto Kimio

  Department Of Electrical Engineering Faculty Of Engineering Kyushu University

• Nakashima Hiroshi

  Department Of Biology Faculty Of Science Okayama University

• KITAGAWA Hajime

  Department of Electronic Materials Engineering, Fukuoka Institute of Technology

• Kitagawa H

  Canon Inc. Utsunomiya Jpn

• Kitagawa Hajime

  Deportment Of Information Electronics Fukuoka Institute Of Technology

• Kitagawa Hajime

  Production-systems Engineering Toyohashi University Of Technology

• YOSHIDA Masayuki

  Yoshida Semiconductor Laboralory

• TAKAHASHI Manabu

  Fukuoka Institute of Technology

• MIYAMOTO Tokuo

  Department of Electronics, Faculty of Engineering, Fukuoka University

• Yoshida Masayoshi

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Takahashi M

  Semiconductor Leading Edge Technologies Inc

• Kitagawa Hajime

  Department Of Electrical Engineering Faculty Of Engineering Kyushu University

• Miyamoto Tokuo

  Department Of Electronics Engineering And Computer Science Faculty Of Engineering Fukuoka University

• Yashiro M

  Univ. Tokyo Tokyo

• Takahashi Minoru

  Ceramic Engineering Research Laboratory Nagoya Institute Of Technology

• KAMIURA Yoichi

  Faculty of Engineering, Okayama University

• TSURUNO Reiji

  Kyushu Institute of Design

• Tsuruno Reiji

  Department Of Visual Communication Design Kyushu Institute Of Design

• Miyamoto T

  Tokyo Inst. Technol. Tokyo Jpn

• Kamiura Y

  Graduate School Of Natural Science And Technology Okayama University

• Kamiura Yoichi

  Faculty Of Engineering Okayama University

• TOMOKAGE Hajime

  Depratment of Electronics, Fukuoka University

• Hirota Shouichi

  Department of Electronics, Fukuoka University

• Miyamoto Tokuo

  Department Of Electronics Engineering Fukuoka Univetsily

• Hirota Shouichi

  Department Of Electronics Fukuoka University

• YAMAKAWA Tetsuya

  Department of Electronics Engineering, Fukuoka University

• KAMIBAYASHI Hidefumi

  Department of Electronics Engineering, Fukuoka Univetsily

• Kamibayashi Hidefumi

  Department Of Electronics Engineering Fukuoka Univetsily

• Yamakawa T

  Department Of Electronics Engineering Fukuoka University:(present Address)fujitsu Ltd.

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著作論文

• Bulk Boundary Condition for Numerical Solution of Simultaneous Diffusion Equations of Phosphorus and Point Defects in Silicon
• One Bond-Type Migration of Phosphorus in Silicon by Interstitialcy Mechanism
• Changes of DLTS Spectrum with Gold Concentration and Gold-Diffusion Temperature in N-Type Silicon
• Annealing of Supersaturated Low-Temperature Substitutional Gold in Silicon
• A Simple Method to Determine λ from Isothermal Capacitance Measurements
• Three States of Substitutional Gold in Silicon
• Effect of Annealing Method upon Annealing Characteristics of Supersaturated Substitutional Gold in Silicon
• Schematic Model for the Migration of Interstitialcy-Type Self-Interstitial Including the Middle State
• Energy Level and Solid Solubility of Cobalt in Silicon by In-Depth Profile Measurement
• Reverse Recovery Time of Junction Diodes with High Capture Rate of Minority Carriers in the Low Injection Level
• Edge Effect on the Determination of Capture Rate of Minority Carriers from Transient Capacitance Measurement
• Differential Method for Measuring Thermally Stimulated Capacitance
• Simple ICTS Measurement Method
• Note on the Analysis of DLTS and C^2-DLTS

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