KAMIURA Yoichi | Faculty of Engineering, Okayama University
スポンサーリンク
概要
関連著者
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KAMIURA Yoichi
Faculty of Engineering, Okayama University
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Kamiura Yoichi
Faculty Of Engineering Okayama University
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Kamiura Y
Graduate School Of Natural Science And Technology Okayama University
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YAMASHITA Yoshifumi
Faculty of Engineering, Okayama University
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YAMASHITA Yoshio
SORTEC Corporation
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Yamaguchi Yoh-ichi
Hoya Corporation
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Yamashita Y
Graduate School Of Natural Science And Technology Okayama University
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Yamashita Yoshifumi
Faculty Of Engineering Okayama University
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HASHIMOTO Fumio
Faculty of Pharmaceutical Sciences, Kumamoto University
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Hashimoto Fumio
Faculity Of Science Osaka City University
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Fukuda K
Electrotechnical Lab. Ibaraki Jpn
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Yoshida M
Functional Materials Research Laboratories Nec Corporation
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Yoshida M
Yoshida Semiconductor Lab. Fukuoka Jpn
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Yamashita Y
Power Supply Materials And Devices Laboratory Corporate R&d Center Toshiba Corporation
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YOSHIDA Masayuki
Yoshida Semiconductor Laboralory
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TAKAHASHI Manabu
Fukuoka Institute of Technology
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TSURUNO Reiji
Kyushu Institute of Design
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YOSHIDA Masayuki
Kyushu Institute of Design
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Tomokage H
Fukuoka Univ. Fukuoka Jpn
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Tomokage Hajime
Department Of Electronics Fukuoka University
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Tomokage Hajime
Department Of Electronics Faculty Of Engineering Fukuoka University
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Tsuruno Reiji
Department Of Visual Communication Design Kyushu Institute Of Design
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Yoshida Masayoshi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Yoshida M
National Institute Of Advanced Industrial And Science Technology (aist)
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Takahashi M
Semiconductor Leading Edge Technologies Inc
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Fukuda Kuniya
Department Of Engineering Physics Faculty Of Engineering Kyoto University
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ISHIYAMA Takeshi
Faculty of Engineering, Okayama University
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FUKUDA Kazuhisa
Faculty of Engineering, Okayama University
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OHYAMA Shigeki
Faculty of Engineering, Okayama University
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Ohyama Shigeki
Faculty Of Engineering Okayama University:(present Address)matsushita-kotobuki Electronics Industrie
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Yashiro M
Univ. Tokyo Tokyo
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Takahashi Minoru
Ceramic Engineering Research Laboratory Nagoya Institute Of Technology
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SUEZAWA Masashi
Institute for Materials Research,Tohoku University
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Suezawa Masashi
Institute For Materials Research Tohoku University
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SUMINO Koji
Institute for Materials Research,Tohoku University
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TOMOKAGE Hajime
Department of Electronics, Fukuoka University
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TOMOKAGE Hajime
Depratment of Electronics, Fukuoka University
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Tomokage Hajime
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Ishiyama Toshihiko
Ntt Integrated Information & Energy Systems Laboratories
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Hashimoto Fumio
Faculty Of Engineering Okayama University
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HIRAMATSU Toshinobu
Faculty of Engineering, Okayama University
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HAYASHI Masao
Faculty of Engineering, Okayama University
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NISHIYAMA Yoshihide
Faculty of Engineering, Okayama University
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UNO Yutaka
Faculty of Engineering, Okayama University
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TERAO Hirobumi
Murata Mfg. Co., Ltd.
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OKADA Joji
Mitsubishi Electric Corporation
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Terao Hirobumi
Murata Mfg. Co. Ltd.
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Ishiyama T
Ntt Telecommunications Energy Lab. Tokyo Jpn
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MAEDA Takashi
Faculty of Engineering, Okayama University
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NAKAMURA Minoru
Hitachi Research Laboratory
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Nishiyama Yoshihide
Faculty Of Engineering Okayama University
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Sumino Koji
Institute For Materials Reseach Tohoku University
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Maeda Takashi
Faculty Of Agriculture. Hokkaido University
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Hayashi Masao
Faculty Of Engineering Okayama University
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Hayashi Masao
Faculty Of Engineering Kyushu Sangyo University
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Ohyama Shigeki
Faculty Of Engineering Okayama University:(present Address)matsushita-kotobuki Electronics Industries Co. Ltd.
著作論文
- One Bond-Type Migration of Phosphorus in Silicon by Interstitialcy Mechanism
- Schematic Model for the Migration of Interstitialcy-Type Self-Interstitial Including the Middle State
- Observation of Long Relaxation from Fe^0(3d^8) to Fe^+(3d^7) by Electron Spin Resonance Measurement
- Stress-Induced Level Shift of a Hydrogen-Carbon Complex in Silicon : Semiconductors
- Isotope Effects on the Dissociation of a Hydrogen-Carbon Complex in Silicon
- Electronically Induced Instability of a Hydrogen-Carbon Complex in Silicon and Its Dissociation Mechanism
- Optical Properties of New Kinds of Thermal Donors in Silicon
- Carbon-Induced Rapid Annihilation of Thermal Double Donors in Czochralski Silicon Studied by Infrared Absorption Spectroscopy
- Defect Symmetries and Structures of Oxygen-Related Donors in Silicon Studied by Stress Deep-Level Transient Spectroscopy
- Formation of Carbon-Related Defects During the Carbon-Enhanced Annihilation of Thermal Donors in Silicon