Schematic Model for the Migration of Interstitialcy-Type Self-Interstitial Including the Middle State
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-12-15
著者
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Yoshida M
Functional Materials Research Laboratories Nec Corporation
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Yoshida M
Yoshida Semiconductor Lab. Fukuoka Jpn
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YOSHIDA Masayuki
Yoshida Semiconductor Laboralory
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TAKAHASHI Manabu
Fukuoka Institute of Technology
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TOMOKAGE Hajime
Department of Electronics, Fukuoka University
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KAMIURA Yoichi
Faculty of Engineering, Okayama University
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TSURUNO Reiji
Kyushu Institute of Design
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YOSHIDA Masayuki
Kyushu Institute of Design
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Tomokage H
Fukuoka Univ. Fukuoka Jpn
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Tomokage Hajime
Department Of Electronics Fukuoka University
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Tomokage Hajime
Department Of Electronics Faculty Of Engineering Fukuoka University
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Tomokage Hajime
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Tsuruno Reiji
Department Of Visual Communication Design Kyushu Institute Of Design
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Yoshida Masayoshi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Yoshida M
National Institute Of Advanced Industrial And Science Technology (aist)
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Takahashi M
Semiconductor Leading Edge Technologies Inc
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Kamiura Y
Graduate School Of Natural Science And Technology Okayama University
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Kamiura Yoichi
Faculty Of Engineering Okayama University
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Yashiro M
Univ. Tokyo Tokyo
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Takahashi Minoru
Ceramic Engineering Research Laboratory Nagoya Institute Of Technology
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