NAKAMURA Minoru | Hitachi Research Laboratory
スポンサーリンク
概要
関連著者
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NAKAMURA Minoru
Hitachi Research Laboratory
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Murakami Susumu
Hitachi Research Laboratory Hitachi Ltd.
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Kawai Naoyuki
Renesas Technol. Corp. Tokyo Jpn
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SAITO Shigeaki
Renesas Technology Corp.
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ARIE Hiroyuki
Renesas Technology Corp.
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Hozoji Hiroshi
Hitachi Research Laboratory Hitachi Ltd.
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Nakamura Minoru
Hitachi Research Laboratory Hitachi Ltd.
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Usami Katsuhisa
Hitachi Research Laboratory
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KAMIURA Yoichi
Faculty of Engineering, Okayama University
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KOBAYASHI Yutaka
Hitachi Research Laboratory, Hitachi Ltd.
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Kamiura Yoichi
Faculty Of Engineering Okayama University
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YAMASHITA Yoshifumi
Faculty of Engineering, Okayama University
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MAEDA Takashi
Faculty of Engineering, Okayama University
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Yamashita Yoshifumi
Faculty Of Engineering Okayama University
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MURAKAMI Susumu
Hitachi Research Laboratory, Hitachi, Ltd.
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HOZOJI Hiroshi
Hitachi Research Laboratory, Hitachi, Ltd.
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Maeda Takashi
Faculty Of Agriculture. Hokkaido University
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Kobayashi Yutaka
Hitachi Research Laboratory
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Arie Hiroyuki
Renesas Technology Corp., 20-1 Josuihon-cho 5-chome, Kodaira, Tokyo 187-8588, Japan
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Matsukawa Kazuhito
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Susumu Murakami
Hitachi Research Laboratory, Hitachi, Ltd., 1-1 Omika-cho 7-chome, Hitachi, Ibaraki 319-1292, Japan
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Murakami Susumu
Hitachi Research Laboratory, Hitachi, Ltd., 1-1 Omika-cho 7-chome, Hitachi, Ibaraki 319-1292, Japan
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Murakami Susumu
Hitachi Research Laboratory, Hitachi, Ltd., 1-1, 7-Chome, Omika-cho, Hitachi, Ibaraki 319-1292, Japan
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Hozoji Hiroshi
Hitachi Research Laboratory, Hitachi, Ltd., 1-1, 7-Chome, Omika-cho, Hitachi, Ibaraki 319-1292, Japan
著作論文
- Formation of Carbon-Related Defects During the Carbon-Enhanced Annihilation of Thermal Donors in Silicon
- Concentration Study of Deep-Level Cu Center in Cu-Diffused Si Crystals by Deep-Level Transient Spectroscopy and Photoluminescence Measurements
- Order of the Formation Reaction and the Origin of the Photoluminescence W Center in Silicon Crystal(Semiconductors)
- Unusual Band-Edge Photoluminescence Intensity Emitted by Cu-Diffused Silicon Crystals
- Concentration Study of Deep-Level Cu Center in Cu-Diffused Si Crystals by Deep-Level Transient Spectroscopy and Photoluminescence Measurements
- Raman Studies of Internal Stress and Crystallinity of Pulse-Laser-Irradiated Silicon on Sapphire (SOS) in Relation to Hall Mobility
- Diffusion-Temperature-Dependent Formation of Cu Centers in Cu-Saturated Silicon Crystals Studied by Photoluminescence and Deep-Level Transient Spectroscopy
- Compositional Transformation between Cu Centers by Annealing in Cu-Diffused Silicon Crystals Studied with Deep-Level Transient Spectroscopy and Photoluminescence
- Deep-Level Transient Spectroscopy and Photoluminescence Studies of Formation and Depth Profiles of Copper Centers in Silicon Crystals Diffused with Dilute Copper