Murakami Susumu | Hitachi Research Laboratory Hitachi Ltd.
スポンサーリンク
概要
関連著者
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Murakami Susumu
Hitachi Research Laboratory Hitachi Ltd.
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NAKAMURA Minoru
Hitachi Research Laboratory
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Kawai Naoyuki
Renesas Technol. Corp. Tokyo Jpn
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SAITO Shigeaki
Renesas Technology Corp.
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ARIE Hiroyuki
Renesas Technology Corp.
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Hozoji Hiroshi
Hitachi Research Laboratory Hitachi Ltd.
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MURAKAMI Susumu
Hitachi Research Laboratory, Hitachi, Ltd.
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HOZOJI Hiroshi
Hitachi Research Laboratory, Hitachi, Ltd.
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Ohno Hideki
Department Of Gastroenterology Graduate School Of Medicine University Of Tokyo
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Nakamura Minoru
Hitachi Research Laboratory Hitachi Ltd.
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Arie Hiroyuki
Renesas Technology Corp., 20-1 Josuihon-cho 5-chome, Kodaira, Tokyo 187-8588, Japan
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Matsukawa Kazuhito
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Nakamura Minoru
8-704, 11 Ban, Ishikawa-cho, Hitachinaka 312-0057, Japan
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Susumu Murakami
Hitachi Research Laboratory, Hitachi, Ltd., 1-1 Omika-cho 7-chome, Hitachi, Ibaraki 319-1292, Japan
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Murakami Susumu
Hitachi Research Laboratory, Hitachi, Ltd., 1-1 Omika-cho 7-chome, Hitachi, Ibaraki 319-1292, Japan
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Murakami Susumu
Hitachi Research Laboratory, Hitachi Ltd., 1-1, 7-Chome Omika-cho, Hitachi 319-1292, Japan
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Murakami Susumu
Hitachi Research Laboratory, Hitachi, Ltd., 1-1, 7-Chome, Omika-cho, Hitachi, Ibaraki 319-1292, Japan
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Hozoji Hiroshi
Hitachi Research Laboratory, Hitachi, Ltd., 1-1, 7-Chome, Omika-cho, Hitachi, Ibaraki 319-1292, Japan
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Ohno Hideki
Department of Physics, Tokyo National College of Technology 1220-2 Kunugida, Hachiouji, Tokyo 193-0997, Japan
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OHNO Hideki
Department of Gastroenterology and Cancer Gene Regulation, Kanazawa University Graduate School of Medical Sciences
著作論文
- Concentration Study of Deep-Level Cu Center in Cu-Diffused Si Crystals by Deep-Level Transient Spectroscopy and Photoluminescence Measurements
- Unusual Band-Edge Photoluminescence Intensity Emitted by Cu-Diffused Silicon Crystals
- Concentration Study of Deep-Level Cu Center in Cu-Diffused Si Crystals by Deep-Level Transient Spectroscopy and Photoluminescence Measurements
- Formation of the 1.014 eV Photoluminescence Cu Center in Cu-implanted Silicon Crystals and the Center’s Model
- Diffusion-Temperature-Dependent Formation of Cu Centers in Cu-Saturated Silicon Crystals Studied by Photoluminescence and Deep-Level Transient Spectroscopy
- Compositional Transformation between Cu Centers by Annealing in Cu-Diffused Silicon Crystals Studied with Deep-Level Transient Spectroscopy and Photoluminescence
- Deep-Level Transient Spectroscopy and Photoluminescence Studies of Formation and Depth Profiles of Copper Centers in Silicon Crystals Diffused with Dilute Copper