Concentration Study of Deep-Level Cu Center in Cu-Diffused Si Crystals by Deep-Level Transient Spectroscopy and Photoluminescence Measurements
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2006-01-25
著者
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Kawai Naoyuki
Renesas Technol. Corp. Tokyo Jpn
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NAKAMURA Minoru
Hitachi Research Laboratory
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MURAKAMI Susumu
Hitachi Research Laboratory, Hitachi, Ltd.
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HOZOJI Hiroshi
Hitachi Research Laboratory, Hitachi, Ltd.
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SAITO Shigeaki
Renesas Technology Corp.
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ARIE Hiroyuki
Renesas Technology Corp.
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Hozoji Hiroshi
Hitachi Research Laboratory Hitachi Ltd.
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Nakamura Minoru
Hitachi Research Laboratory Hitachi Ltd.
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Murakami Susumu
Hitachi Research Laboratory Hitachi Ltd.
関連論文
- Formation of Carbon-Related Defects During the Carbon-Enhanced Annihilation of Thermal Donors in Silicon
- Concentration Study of Deep-Level Cu Center in Cu-Diffused Si Crystals by Deep-Level Transient Spectroscopy and Photoluminescence Measurements
- Order of the Formation Reaction and the Origin of the Photoluminescence W Center in Silicon Crystal(Semiconductors)
- Unusual Band-Edge Photoluminescence Intensity Emitted by Cu-Diffused Silicon Crystals
- Concentration Study of Deep-Level Cu Center in Cu-Diffused Si Crystals by Deep-Level Transient Spectroscopy and Photoluminescence Measurements
- Raman Studies of Internal Stress and Crystallinity of Pulse-Laser-Irradiated Silicon on Sapphire (SOS) in Relation to Hall Mobility
- Formation of the 1.014 eV Photoluminescence Cu Center in Cu-implanted Silicon Crystals and the Center’s Model
- Diffusion-Temperature-Dependent Formation of Cu Centers in Cu-Saturated Silicon Crystals Studied by Photoluminescence and Deep-Level Transient Spectroscopy
- Compositional Transformation between Cu Centers by Annealing in Cu-Diffused Silicon Crystals Studied with Deep-Level Transient Spectroscopy and Photoluminescence
- Deep-Level Transient Spectroscopy and Photoluminescence Studies of Formation and Depth Profiles of Copper Centers in Silicon Crystals Diffused with Dilute Copper