Formation of Carbon-Related Defects During the Carbon-Enhanced Annihilation of Thermal Donors in Silicon
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概要
- 論文の詳細を見る
We observed that a defect related to carbon and phosphorus was formed during the carbon-enhanced annihilation of thermal donors at 470℃ in silicon. We determined, using deep-level transient spectroscopy (DLTS), that the defect has a deep level at E_c-0.36 eV and its density has positive correlation with carbon and phosphorus densities. The formation rate of the defect is proportional to the phosphorus density. We also observed the 767 meV photoluminescence line (P-line) that had been identified as the complex with a core of interstitial carbon, vacancy and oxygen dimer. We tentatively ascribe the E_c-0.36 eV defect to the pair of interstitial carbon and substitutional phosphorus.
- 社団法人応用物理学会の論文
- 1998-02-01
著者
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KAMIURA Yoichi
Faculty of Engineering, Okayama University
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Kamiura Yoichi
Faculty Of Engineering Okayama University
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YAMASHITA Yoshifumi
Faculty of Engineering, Okayama University
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MAEDA Takashi
Faculty of Engineering, Okayama University
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NAKAMURA Minoru
Hitachi Research Laboratory
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Yamashita Yoshifumi
Faculty Of Engineering Okayama University
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Maeda Takashi
Faculty Of Agriculture. Hokkaido University
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