Structure and Stress-Induced Alignment of a Hydrogen-Carbon Complex in Silicon
スポンサーリンク
概要
- 論文の詳細を見る
We applied deep-level transient spectroscopy (DLTS) under uniaxial stress to study the structure and bonding nature of a hydrogen-carbon (H-C) complex in Si. The application of <111> and <110> compressive stresses split the DLTS peak into two as rations of 1:3 and 2:2, respectively, which were the ratios of the low-temperature peak to the high-temperature peak. No splitting was observed under the <100> stress. These results indicate the trigonal symmetry of the H-C complex and the anti-bonding nature of its electronic state. We observed a stress-induced alignment of the complex at 250K for 50 min under a <110> stress of 1 GPa.
- 社団法人応用物理学会の論文
- 1997-11-01
著者
-
Kamiura Yoichi
Faculty Of Engineering Okayama University
-
Yamashita Yoshifumi
Faculty Of Engineering Okayama University
-
YAMASHITA Yoshifumi
Faculty of Engineering, Osaka University
-
Ishiga Nobuaki
Faculty of Engineering, Osaka University
-
ISHIGA Nobuaki
Faculty of Engineering, Osaka University:(Present address) Advanced Display Inc.
-
KAMIMURA Yoichi
Faculty of Engineering, Osaka University
関連論文
- One Bond-Type Migration of Phosphorus in Silicon by Interstitialcy Mechanism
- Schematic Model for the Migration of Interstitialcy-Type Self-Interstitial Including the Middle State
- Stress-Induced Level Shift of a Hydrogen-Carbon Complex in Silicon : Semiconductors
- Isotope Effects on the Dissociation of a Hydrogen-Carbon Complex in Silicon
- Electronically Induced Instability of a Hydrogen-Carbon Complex in Silicon and Its Dissociation Mechanism
- Optical Properties of New Kinds of Thermal Donors in Silicon
- Carbon-Induced Rapid Annihilation of Thermal Double Donors in Czochralski Silicon Studied by Infrared Absorption Spectroscopy
- Defect Symmetries and Structures of Oxygen-Related Donors in Silicon Studied by Stress Deep-Level Transient Spectroscopy
- Formation of Carbon-Related Defects During the Carbon-Enhanced Annihilation of Thermal Donors in Silicon
- Photo-Enhanced Activation of Hydrogen-Passivated Magnesium in P-Type GaN Films
- Structure and Stress-Induced Alignment of a Hydrogen-Carbon Complex in Silicon
- Observation of Long Relaxation from Fe0(3d8) to Fe+(3d7) by Electron Spin Resonance Measurement
- Copper-Related Deep Levels and Their Annealing Kinetics in Germanium