Optical Properties of New Kinds of Thermal Donors in Silicon
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-11-20
著者
-
HASHIMOTO Fumio
Faculty of Pharmaceutical Sciences, Kumamoto University
-
SUEZAWA Masashi
Institute for Materials Research,Tohoku University
-
Suezawa Masashi
Institute For Materials Research Tohoku University
-
SUMINO Koji
Institute for Materials Research,Tohoku University
-
KAMIURA Yoichi
Faculty of Engineering, Okayama University
-
Kamiura Yoichi
Faculty Of Engineering Okayama University
-
Hashimoto Fumio
Faculity Of Science Osaka City University
-
Sumino Koji
Institute For Materials Reseach Tohoku University
関連論文
- Pharmacological Study on the Novel Antinociceptive Agent, a Novel Monoterpene Alkaloid from Incarvillea sinensis(Pharmacognosy)
- Antinociceptive Activities of α-Truxillic Acid and β-Truxinic Acid Derivatives(Pharmacognosy)
- Anti-inflammatory Activity of 4,4'-Dihydroxy-α-truxillic Acid(Pharmacognosy)
- Quantitative Determination of Incarvillateine in Incarvillea sinensis by Solid Phase Extraction and High Performance Liquid Chromatography
- Anti-inflammatory Activities of α-Truxillic Acid Derivatives and Their Monomer Components(Medicinal Chemistry)
- A Monoterpene Alkaloid from Incarvillea sinensis
- Evaluation of the Anti-oxidative Effect (in vitro) of Tea Polyphenols(Organic Chemistry)
- Anti-Oxidative Constituents from Leonurii Herba (Leonurus japonicus)
- Anthocyanins from the Red Flowers of Camellia saluenensis Stapf ex Bean
- Chemical taxonomy of the Xibei tree peony from China by floral pigmentation
- Phenetics in Tree Peony Species from China by Flower Pigment Cluster Analysis
- Monoterpene Alkaloids from Incarvillea sinensis. VI. Absolute Stereochemistry of Incarvilline and Structure of a New Alkaloid, Hydroxyincarvilline
- Analysis of Petal Anthocyanins to Investigate Flower Coloration of Zhongyuan (Chinese) and Daikon Island (Japanese) Tree Peony Cultivars
- Observation of Dipole-Forbidden Transitions througy Fano Antiresonance in Boron-Doped Silicon
- Inhibitory Activities of(-)-Epigallocatechin-3-O-gallate against Topoisomerases I and II
- ESR Study on Local Structure of UV-Induced Midgap States in [Pt (en)_2][Pt (en)_2Cl_2](ClO_4)_4, en=ethylenediamine
- ESR Observation of the Motion of Optically Induced Paramagnetic Dimers in [Pt (en)_2][Pt (en)_2Cl_2](ClO_4)_4(en=ethylenediamine)
- Cytotoxic Activities of Solanum Steroidal Glycosides
- One Bond-Type Migration of Phosphorus in Silicon by Interstitialcy Mechanism
- Precipitation of Cu and Fe in Dislocated Floating-Zone-Grown Silicon
- Photodegradation of Polysilanes Studied by Far-Infrared Spectroscopy
- Impurity Dependence of Vacancy Formation Energy in Silicon Determined by a New Quenching Method
- Vacancy Formation Energy of Silicon Determined by a New Quenching Method : Semiconductors
- Concentration Profiles of Deep Levels Induced by Gold Diffusion in Silicon
- Stacking Fault Induced by Gold Diffusion in Silicon
- Vacancy-Oxygen Pairs and Vacancy-Oxygen-Hydrogen Complexes in Electron-Irradiated n-type Cz-Si Pre-Doped with Hydrogen
- Properties of Platinum-Hydrogen Complexes in Silicon : an ESR Study : Semiconductors
- Optical Absorption Study of Electron-irradiated Czochralski-grown Silicon Doped with Hydrogen(Semiconductors)
- ESR Spectra from Platinum-Hydrogen Pair in Silicon : Semiconductors
- Positron Annihilations Associated with Defects in Plastically Deformed Si
- Charge State Dependences of Positron Trapping Rates Associated with Divacancies and Vacancy-Phosphorus Pairs in Si
- The Nature of Nitrogen-Oxygen Complexes in Silicon
- H_2-related Defects in Si Quenched in H_2 Gas Studied by Optical Absorption Measurements
- Defects with Deep Levels in GaAs Induced by Plastic Deformation and Electron Irradiation : Semiconductors and Semiconductor Devices
- Schematic Model for the Migration of Interstitialcy-Type Self-Interstitial Including the Middle State
- Observation of Long Relaxation from Fe^0(3d^8) to Fe^+(3d^7) by Electron Spin Resonance Measurement
- Stress-Induced Level Shift of a Hydrogen-Carbon Complex in Silicon : Semiconductors
- Isotope Effects on the Dissociation of a Hydrogen-Carbon Complex in Silicon
- Electronically Induced Instability of a Hydrogen-Carbon Complex in Silicon and Its Dissociation Mechanism
- High-Resolution Photoinduced Transient Spectroscopy of Electrically Active Iron-Related Defects in Electron Irradiated High-Resistivity Silicon
- Optical Properties of New Kinds of Thermal Donors in Silicon
- Carbon-Induced Rapid Annihilation of Thermal Double Donors in Czochralski Silicon Studied by Infrared Absorption Spectroscopy
- Defect Symmetries and Structures of Oxygen-Related Donors in Silicon Studied by Stress Deep-Level Transient Spectroscopy
- Effect of Copper or Silver on the Clustering in Al-10 wt%Zn Alloys
- Observation of Lattice Defects in Solid Helium by SR X-Ray Topography
- Complexes of Nitrogen and Point Defects in Silicon
- Influences of Cu and Fe Impurities on Oxygen Precipitation in Czochralski-Grown Silicon
- Formation of Carbon-Related Defects During the Carbon-Enhanced Annihilation of Thermal Donors in Silicon
- Iron Gettering Controlled by Size and Density of Oxygen Precipitates in Czochralski-Grown Silicon
- Iron Gettering Controlled by Size and Density of Oxygen Precipitates in CZ Silicon
- Properties of an Iron-Vacancy Pair in Silicon
- Relation between the Metastability and the Configuration of Iron-Acceptor Pairs in Silicon
- Reply to "Comment on 'Comment on "Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon"'"
- Comment on "Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon" [J. Phys. Soc. Jpn. 75 (2006) 044602]
- Photo-Enhanced Activation of Hydrogen-Passivated Magnesium in P-Type GaN Films
- Growth and Characterization of Bulk Si-Ge Single Crystals
- Strong Photoluminescence from the Reaction Product of Erbium and Oxygen on Silicon Crystal
- Formation Energy of Antisite Boron in GaAs
- Generation Kinetics of EL2 Centers in GaAs : Condensed Matter
- Hydrogen-Point Defect Complexes in Electron-Irradiated C-Doped and High-Purity Si
- Electron Spin Resonance Study of Deformation-Induced Si-Kl Centers in Silicon
- Temperature Dependence of the Optical Absorption Peaks at around 1990 cm^ in Electron-irradiated Si doped with Hydrogen
- Structure and Stress-Induced Alignment of a Hydrogen-Carbon Complex in Silicon
- Observation of Long Relaxation from Fe0(3d8) to Fe+(3d7) by Electron Spin Resonance Measurement
- Self-Interstitial in Electron-Irradiated Si Detected by Optical Absorption Due to Hydrogen Bound to It
- On the Extended Point Defect Model in Si Crystals at High Temperature
- Vacancy-Oxygen Pairs and Vacancy-Oxygen-Hydrogen Complexes in Electron-Irradiated n-type Cz-Si Pre-Doped with Hydrogen
- Copper-Related Deep Levels and Their Annealing Kinetics in Germanium